2022
DOI: 10.1088/1361-648x/ac66b4
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Sensitive angle-dependent magnetoelectric coupling in cluster-assembled flexible composites

Abstract: Flexible magnetoelectric device is one of the indispensable elements. However, the complicated fabrication process and low sensitivity hinders the practical applications. Here, flexible NiFe anisotropic magnetoelastic composites were prepared by cluster–supersonic expansion method assistant with polyvinylidene fluoride (PVDF) substrates. The NiFe/PVDF composites possess sensitive angle–resolution magnetoelectric coupling coefficient at room temperature, and the value can reach 0.66 μV/deg. The strong anisotrop… Show more

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Cited by 3 publications
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“…Multiferroic materials are of appealing scientific and technological interest owing to their magnetoelastic and magnetoelectric properties, originating from intertwined ferromagnetic and ferroelectric order parameters. , However, the room temperature (RT) device application of single phase multiferroics is hampered by the strength of magnetoelectric strength as well as by the complex relation between electric and magnetic polarization. An artificial multiferroic (AM) provides an alternate strategy to engineer functional devices via introducing an indirect coupling between two materials such as a ferroelectric and a ferromagnetic. This indirect coupling between the two ferroic materials occurs extrinsically by strain or charge carrier or spin exchange and can be achieved in the form of composites, , laminates, , or nanostructures, , which combined together show multiferroicity. From the application point of view, in the thin film-based AM, each layer of ferroelectric–ferromagnetic heterostructure allows a separate promising tuning of the relevant physical properties, such as structural, electrical, or magnetic properties, manifesting the potentiality of these novel devices.…”
Section: Introductionmentioning
confidence: 99%
“…Multiferroic materials are of appealing scientific and technological interest owing to their magnetoelastic and magnetoelectric properties, originating from intertwined ferromagnetic and ferroelectric order parameters. , However, the room temperature (RT) device application of single phase multiferroics is hampered by the strength of magnetoelectric strength as well as by the complex relation between electric and magnetic polarization. An artificial multiferroic (AM) provides an alternate strategy to engineer functional devices via introducing an indirect coupling between two materials such as a ferroelectric and a ferromagnetic. This indirect coupling between the two ferroic materials occurs extrinsically by strain or charge carrier or spin exchange and can be achieved in the form of composites, , laminates, , or nanostructures, , which combined together show multiferroicity. From the application point of view, in the thin film-based AM, each layer of ferroelectric–ferromagnetic heterostructure allows a separate promising tuning of the relevant physical properties, such as structural, electrical, or magnetic properties, manifesting the potentiality of these novel devices.…”
Section: Introductionmentioning
confidence: 99%