Sensing properties of assembled Bi₂S₃nanowire arrays

Abstract

Bismuth sulfide (Bi2S3) nanowires were grown in porous aluminium oxide template and a selective chemical etching was applied to transfer the nanowires to a solution. Well aligned nanowire arrays were assembled on pre-patterned silicon substrates employing dielectrophoresis. Electron beam lithography was used to connect aligned individual nanowires to the common macroelectrode. In order to evaluate the conductometric sensing performance of the Bi2S3 nanowires, current–voltage characteristics were measured at different relative humidity (RH) levels (5–80%) / argon medium. The response of the Bi2S3 nanowires depending of RH is found to be considerably different from those reported for other types of nanowire RH sensor devices.

Space charge limited current mechanism in Bi2S3 nanowires

“…25 Unlike previous reports, electrical measurements were performed under vacuum, so as to minimize the effect of humidity on the carrier transport properties of the nanowires. 26 Figure 2(a) shows several IVCs for Bi 2 S 3 nanowires as a function of temperature. A linear behavior was observed only at 295 K; IVCs became strongly nonlinear as the temperature fell below 240 K. To determine the mechanism responsible for the nonlinear characteristics, the data were fitted using several conduction models for semiconductors and insulators.…”

Relative Humidity Dependent Resistance Switching of Bi2S3Nanowires

“…Obtained nanowire suspension was centrifuged to separate nanowires from the alumina dissolution products. Separated nanowires were washed in deionized water three times and then transferred to the isopropanol [14,16].…”

“…Bi 2 S 3 is an n-type semiconductor with a 1.3 eV direct band gap. Conductivity of individual nanowires and nanowire arrays is well characterized [13][14][15][16][17]. Its characteristic doping with sulfur vacancies could be altered by the surface adsorbents governing remarkable change of resistance.…”

Development of High-Performance Bismuth Sulfide Nanobelts Humidity Sensor and Effect of Humid Environment on its Transport Properties

“…16 One-dimensional metal sulfide/oxide nanostructures have gained much consideration due to their exceptional properties. 17,18 Among them, Bi 2 S 3 with direct band gap (1.3 eV) finds several applications in humidity sensors, 18 gas sensors, 19 infrared spectroscopy, optoelectronic devices, electronic devices, and thermoelectric devices. 20 For the synthesis of Bi 2 S 3 nanostructures, different methods have been used, for example, solvothermal/hydrothermal, 21,22 microwave irradiation, 23 and chemical deposition.…”

“…Results show that optimized Bi 2 S 3 nanobelts RH sensors possess high response in humid environment, fast response/recovery time, good recyclability, and good stability compared to other metal sulfide nanostructures reported in the literature. 18,28−32 The schematic diagram of a homemade RH sensing setup is shown in Figure 1.…”