Sensing performance of β-Ga2O3 metal–semiconductor-metal deep ultraviolet photodetectors with refractory TiW electrodes at high temperatures

Zhang, Maolin; Ma, Wanyu; Liu, Zeng; Yang, Lili; Li, Shan; Guo, Yufeng; Tang, Weihua

doi:10.1016/j.rinp.2023.107110

Results in Physics

2023

DOI: 10.1016/j.rinp.2023.107110

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Sensing performance of β-Ga2O3 metal–semiconductor-metal deep ultraviolet photodetectors with refractory TiW electrodes at high temperatures

Maolin Zhang,

Wanyu Ma,

Zeng Liu

et al.

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2024

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Cited by 3 publications

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Symmetric engineered central cross-shaped broadband metamaterial absorber with high absorption and stability for solar sailing and solar energy applications

Rahman,

Soliman,

Islam

et al. 2024

Surfaces and Interfaces

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Symmetric engineered central cross-shaped broadband metamaterial absorber with high absorption and stability for solar sailing and solar energy applications

Rahman,

Soliman,

Islam

et al. 2024

Surfaces and Interfaces

View full text Add to dashboard Cite

Electrode materials and structures in UV photodetectors

Ouyang,

Zhang

2024

Applied Physics Reviews

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Electrodes can be recognized as the bridges between photodetectors (PDs) and outer measurement circuits. The interfacial electric properties between electrodes and sensitive materials would dominate the separation and collection of photo-induced charge carrier, which are recognized as one of the critical factors influencing the photo-detecting performance. In this paper, the electrode materials used in UV PDs are summarized and categorized according to their components. Then, the effects of electrode configurations (such as the contact types, band structure, and electrode structure) on the photoelectric performances of UV PDs are discussed. Varied kinds of specific electrodes such as transparent electrodes, flexible electrodes, and bio-originated electrodes are described. Finally, the perspective of electrodes in UV PDs is presented, which provides guidance for their future development.

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Preparation of Sn-Doped Ga2O3 Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering

Liu,

Huang,

Lin

et al. 2024

Materials

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Sn-doped Ga2O3 thin films and metal–semiconductor–metal (MSM) ultraviolet detectors were prepared using the co-sputtering method to enhance their photoelectric performance. The results revealed that Sn doping can effectively change the optical and electrical properties of thin films, greatly improving the photoelectric responsiveness of the devices. Through microstructure testing results, all of the thin film structures were determined to be monoclinic beta phase gallium oxide. At a DC power of 30 W, the thickness of the Sn-doped thin film was 430 nm, the surface roughness of the thin film was 4.94 nm, and the carrier concentration, resistivity, and mobility reached 9.72 × 1018 cm−3, 1.60 × 10−4 Ω·cm, and 45.05 cm3/Vs, respectively. The optical results show that Sn doping clearly decreases the transmission of thin films and that the bandgap can decrease to 3.91 eV. Under 30 W DC power, the photo dark current ratio of the detector can reach 101, time responses of tr = 31 s and tf = 22.83 s were obtained, and the spectral responsivity reached 19.25 A/W.

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Sensing performance of β-Ga2O3 metal–semiconductor-metal deep ultraviolet photodetectors with refractory TiW electrodes at high temperatures

Cited by 3 publications

References 45 publications

Symmetric engineered central cross-shaped broadband metamaterial absorber with high absorption and stability for solar sailing and solar energy applications

Symmetric engineered central cross-shaped broadband metamaterial absorber with high absorption and stability for solar sailing and solar energy applications

Electrode materials and structures in UV photodetectors

Preparation of Sn-Doped Ga2O3 Thin Films and MSM Ultraviolet Detectors Using Magnetron Co-Sputtering

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