Sensing NO2 with individual suspended single-walled carbon nanotubes

Helbling, T.; Pohle, Roland; Durrer, L.; Stampfer, Christoph; Roman, Cosmin; Jungen, A.; Fleischer, Maximilian; Hierold, Christofer

doi:10.1016/j.snb.2007.11.036

Cited by 70 publications

(47 citation statements)

References 17 publications

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“…It is also noted at this point the finding of Ref. [18] that the final I ds values of the transient measurements ( Fig. 2a and d) and the I ds values of the intrinsic gate characteristics at V g = 0 V (Fig.…”

Section: Comparison Of Suspended and Non-suspendedsupporting

confidence: 72%

“…[18] and the preparation of the nano catalysts and chemical vapor deposition (CVD) growth of the SWNTs in Refs. [19,20].…”

Section: Cnfet Fabricationmentioning

confidence: 99%

“…Therefore, the intrinsic, hysteresis-free CNFET characteristic has to be measured according to Ref. [18] (Fig. 2a) for constant V g = 0 V and V ds = 100 mV to 180 ppm NO 2 of 16 min (which is the time it takes I ds to change from 10% to 90% of the I ds end value) is in the same order of magnitude as the response time to 60 ppm (120 ppm) NO 2 ( Fig.…”

Section: Comparison Of Suspended and Non-suspendedmentioning

confidence: 99%

“…This begs the question, if the observed response of CNFETs to NO 2 is not just due to charge transfer between NO 2 and SiO 2 gating the CNFET. Recently it has been demonstrated that suspended CNFETs are sensitive to NO 2 [18]. In contrast to that finding where the response of suspended CNFETs to NO 2 was discussed, this paper focuses on the first qualitative comparison of measurements from suspended CNFETs (that are not in contact with the SiO 2 ) to measurements of CNFETs in direct contact to the SiO 2 .…”

mentioning

confidence: 98%

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Suspended and non‐suspended carbon nanotube transistors for NO₂ sensing – A qualitative comparison

Helbling

Hierold

Durrer

et al. 2008

Physica Status Solidi (b)

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A qualitative comparison of the NO2 sensitivity of carbon nanotube field effect transistors (CNFETs) has been performed on CNFETs with 1) suspended channels, and 2) channels that are in contact with the SiO2 substrate. No significant response difference to NO2 is apparent in the two CNFET configurations. Therefore, the SiO2 substrate acting as a dominant indirect sensing mechanism can be ruled out.Additionally, two measurement modes in CNFETs are presented and discussed. The measurement modes are: 1) chemiresistor response, and 2) the shift of the CNFET gate characteristic toward positive gate voltages. A method is proposed to acquire the shift in the gate threshold for future CNFET sensor applications, and examples of such transduction curves of two sensors are presented. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Comparison Of Suspended and Non-suspendedsupporting

confidence: 72%

“…[18] and the preparation of the nano catalysts and chemical vapor deposition (CVD) growth of the SWNTs in Refs. [19,20].…”

Section: Cnfet Fabricationmentioning

confidence: 99%

Section: Comparison Of Suspended and Non-suspendedmentioning

confidence: 99%

mentioning

confidence: 98%

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Suspended and non‐suspended carbon nanotube transistors for NO₂ sensing – A qualitative comparison

Helbling

Hierold

Durrer

et al. 2008

Physica Status Solidi (b)

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“…In recent years, field-effect transistors have been suggested as an alternative sensing technology [4,5]. A wide variety of semiconductors has been investigated for NO 2 sensing, such as amorphous organic semiconductors [6,7], porous silicon [8,9], silicon nanowires [10], carbon nanotubes [11][12][13], and metal oxide nanowires [14]. In all cases, changes in current upon NO 2 exposure have been demonstrated.…”

Section: Introductionmentioning

confidence: 99%

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Andringa

Vlietstra

Smits

et al. 2012

Sensors and Actuators B: Chemical

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Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors Andringa, Anne-Marije; Vlietstra, Nynke; Smits, Edsger C. P.; Spijkman, Mark-Jan; Gomes, Henrique L.; Klootwijk, Johan H.; Blom, Paul W. M.; de Leeuw, Dago M. Link to publication in University of Groningen/UMCG research database Citation for published version (APA): Andringa, A-M., Vlietstra, N., Smits, E. C. P., Spijkman, M-J., Gomes, H. L., Klootwijk, J. H., ... de Leeuw, D. M. (2012). Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors. Sensors and actuators b-Chemical, 171(27), 1172-1179. DOI: 10.1016/j.snb.2012 Copyright Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a stretched-exponential time dependence with thermally activated relaxation times. We find an activation energy of 0.1 eV for trapping and 1.2 eV for detrapping. The attempt-to-escape frequency and characteristic temperature have been determined as 1 Hz and 960 K for charge trapping and 10 11 Hz and 750 K for recovery, respectively. Thermally stimulated current measurements confirm the presence of trapped charge carriers with a trap depth of around 1 eV. The obtained functional dependence is used as input for an analytical model that predicts the sensor's temporal behavior. The model is experimentally verified and a real-time sensor has been developed. The perfect agreement between predicted and measured sensor response validates the methodology developed. The analytical description can be used to optimize the driving protocol. By adjusting the operating temperature and the duration of charging and resetting, the response time can be optimized and the sensitivity can be maximized for the desired partial NO 2 pressure window.

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Gate‐Bias Controlled Charge Trapping as a Mechanism for NO₂ Detection with Field‐Effect Transistors

Andringa

Meijboom

Smits

et al. 2010

Adv Funct Materials

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Detection of nitrogen dioxide, NO2, is required to monitor the air‐quality for human health and safety. Commercial sensors are typically chemiresistors, however field‐effect transistors are being investigated. Although numerous investigations have been reported, the NO2 sensing mechanism is not clear. Here, the detection mechanism using ZnO field‐effect transistors is investigated. The current gradually decreases upon NO2 exposure and application of a positive gate bias. The current decrease originates from the trapping of electrons, yielding a shift of the threshold voltage towards the applied gate bias. The shift is observed for extremely low NO2 concentrations down to 10 ppb and can phenomenologically be described by a stretched‐exponential time relaxation. NO2 detection has been demonstrated with n‐type, p‐type, and ambipolar semiconductors. In all cases, the threshold voltage shifts due to gate bias induced electron trapping. The description of the NO2 detection with field‐effect transistors is generic for all semiconductors and can be used to improve future NO2 sensors.

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Sensing NO2 with individual suspended single-walled carbon nanotubes

Cited by 70 publications

References 17 publications

Suspended and non‐suspended carbon nanotube transistors for NO₂ sensing – A qualitative comparison

Suspended and non‐suspended carbon nanotube transistors for NO₂ sensing – A qualitative comparison

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Gate‐Bias Controlled Charge Trapping as a Mechanism for NO₂ Detection with Field‐Effect Transistors

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Sensing NO2 with individual suspended single-walled carbon nanotubes

Cited by 70 publications

References 17 publications

Suspended and non‐suspended carbon nanotube transistors for NO2 sensing – A qualitative comparison

Suspended and non‐suspended carbon nanotube transistors for NO2 sensing – A qualitative comparison

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Gate‐Bias Controlled Charge Trapping as a Mechanism for NO2 Detection with Field‐Effect Transistors

Contact Info

Product

Resources

About

Suspended and non‐suspended carbon nanotube transistors for NO₂ sensing – A qualitative comparison

Suspended and non‐suspended carbon nanotube transistors for NO₂ sensing – A qualitative comparison

Gate‐Bias Controlled Charge Trapping as a Mechanism for NO₂ Detection with Field‐Effect Transistors