Electronic surface states in Al 0.1 Ga 0.9 As|GaAs superlattice are calculated for a system with a ZnMnSe barrier in a surface cell. In the absence of applied magnetic field the ZnM nSe barrier has the same height as the Al 0.1Ga0.9As barriers in the bulk cells. When a magnetic field is applied perpendicularly to the superlattice layers, the surface cell magnetic barrier height is found to vary with spin orientation. Hence, each spin polarization involves different conditions of surface state existence. Our computations show a split of Shockley states into two levels (corresponding to different spin polarizations) and appearance of Tamm states (with specific spin polarization), induced by sufficiently strong magnetic fields.1 Introduction Due to their possible applications in information processing and storage systems, magnetic semiconductor materials, and especially spin and charge transport in mesoscale and nanoscale structures of this type, have become the subject of great scientific interest [1]. The simplest mesoscale structures include quantum wells and their systems: multilayers and superlattices. Reduced structure size makes surface effects very important: the state of surface and interface affects spin and charge injection processes [2], which is reflected in transport characteristics; localized surface states manifest themselves in photoluminescence spectra as well [2,3].Conditions of spin-polarized surface state existence have not been exhaustively discussed so far. Polarization of surface states occurs when border conditions on the surface depend on spin orientation. This study deals with electronic states localized at the interface between the substrate (vacuum) and the superlattice, with two types of state distinguished, according to the classification proposed by Zak [4]: Shockley states [6], appearing spontaneously in an unperturbed crystal (superlattice), and Tamm states [5], induced by surface perturbation, which is understood as deformation of the potential in a surface cell with respect to that in an unperturbed, symmetric bulk cell. In the case considered here, the surface perturbation consists in potential barrier height modification by magnetic field, applied in the direction normal to the superlattice layers. Consequently, Shockley state border conditions become dependent on electron spin orientation, resulting in Shockley state splitting. Magnetic fields strong enough induce Tamm state appearance. In the structure considered here, the applied field does not affect the superlattice bulk; consequently, the superlattice band structure is assumed to be unaffected.