Semiempirical tight-binding band structure of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">II</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">V</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>semiconductor

Sierański, K.; Szatkowski, J.; Misiewicz, J.

doi:10.1103/physrevb.50.7331

Cited by 62 publications

(31 citation statements)

References 39 publications

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“…These methods use optical data to adjust the form factors (EPM) or interaction integrals (SETB). For Cd 3 P 2 the calculations performed within the zincblende approximation with use of the SETB method, led to a direct band gap of 0:53 eV [27]. This result is in good agreement with the optical data [13] and with the value obtained from Shubnikov-de Haas oscillations [14].…”

supporting

confidence: 79%

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Energy Band Structure of Zn3P2-Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations

Andrzejewski

Misiewicz

2001

phys. stat. sol. (b)

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The simplifications of the Zn 3 P 2 -type crystal structure having tetragonal symmetry D 15 4h have been analysed. After description of the real unit cell the following simplifications are proposed: tetragonal symmetry (ideal and D 17 4h ), cubic symmetry and the correct molecular ratio (approximations O 9 h , T 7 h and O 4 h ) and finally the zincblende and antifluorite approximations. In the second part we present the results of energy band calculations for fully symmetric Zn 3 P 2 and for all the simplifications. The symmetry of bands is also determined for the full crystal structure and for the ideal approximation. In the calculations the nonlocal empirical pseudopotential method has been used.

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confidence: 79%

“…The antifluorite approximation is most widely used for the calculations of the band structure of II-V compounds [26][27][28]. Another approximation is the so called zincblende approximation [29].…”

mentioning

confidence: 99%

Energy Band Structure of Zn3P2-Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations

Andrzejewski

Misiewicz

2001

phys. stat. sol. (b)

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“…[7][8][9][10][11][12] Some absorption measurements have led to assignments of the fundamental band gap as direct, [7][8][9] whereas others have concluded that the fundamental gap is indirect. [10][11][12] Computational methods using empirical pseudopotentials have also yielded both direct [13][14][15] and indirect 13,16 transitions at the fundamental band gap, depending whether the crystal structure is modeled as a cubic antifluorite or as a tetragonal structure. A fundamental indirect gap is supported by investigations of the spectral response properties of Mg Schottky diodes 17 and of aqueous photoelectrochemical cells, 5 which have produced estimates of an indirect gap at 1.37 and 1.43 eV, respectively.…”

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confidence: 99%

Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2

Kimball

Müller

Lewis

et al. 2009

Applied Physics Letters

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The steady-state photoluminescence spectra of zinc phosphide ͑Zn 3 P 2 ͒ wafers have revealed a fundamental indirect band gap at 1.38 eV, in close proximity to the direct band gap at 1.50 eV. These values are consistent with the values for the indirect and direct band gaps obtained from analysis of the complex dielectric function deduced from spectroscopic ellipsometric measurements. Bulk minority carrier lifetimes of 20 ns were observed by time-resolved photoluminescence decay measurements, implying minority-carrier diffusion lengths of Ն7 m.

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“…with four phosphorus atoms, whereas those surrounded by cation atoms are located only at six of the eight corners of a coordinating cube. Two vacant sites are located either at diagonal corners of a cubic face or at the opposite spots of a space cubic diagonal [1][2][3][4][5][6]24]. …”

Section: Hmentioning

confidence: 99%

“…Firstly, these are possible applications and secondly come the band structure parameters and layered crystalline structures [1][2][3][4][5][6][7][8][9][10][11]. Now II-V compounds have come to show strong promise of constituting the next generation of electronic materials.…”

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Excitons into one-axis crystals of zinc phosphide (Zn_{3}P_{2})

Stepanchikov¹,

Chuiko²

2009

Condens. Matter Phys.

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Theoretical study of excitons spectra is offered in this report as for Zn 3 P 2 crystals. Spectra are got in the zero approach of the theory of perturbations with consideration of both the anisotropy of the dispersion law and the selection rules. The existence of two exciton series was found, which corresponds to two valence bands (hh, lh) and the conductivity band (c). It is noteworthy that anisotropy of the dispersion law plus the existence of crystalline packets (layers) normal to the main optical axis, both will permit the consideration of two-dimensional excitons too. The high temperature displaying of these 2D-exciton effects is not eliminated even into bulk crystals. The calculated values of the binding energies as well as the oscillator's strength for the optical transitions are given for a volume (3D) and for two-dimensional (2D) excitons. The model of energy exciton transitions and four-level scheme of stimulated exciton radiation for receiving laser effect are offered.

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Semiempirical tight-binding band structure ofII3V2semiconductor

Cited by 62 publications

References 39 publications

Energy Band Structure of Zn3P2-Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations

Energy Band Structure of Zn3P2-Type Semiconductors: Analysis of the Crystal Structure Simplifications and Energy Band Calculations

Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2

Excitons into one-axis crystals of zinc phosphide (Zn_{3}P_{2})

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