2022
DOI: 10.1039/d2cp02627a
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Semiconductors with a chiral crystal structure in group IVB transition metal pernitrides

Abstract: Group IVB transition metal (TM) nitrides rarely exhibit semiconductor phase, except for TM3N4 (TM = Ti, Zr, and Hf) compounds. In this study, using the ab-initio calculations based on density...

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Cited by 3 publications
(3 citation statements)
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“…The NaCl-type ZrN with the superconducting properties has been reported in both theoretical and experimental studies. It also exhibits the outstanding properties in respect of mechanics, electricity, and optics. In a recent study, Yu et al predicted a series of thermodynamically stable Zr-N compounds (Zr 2 N, Zr 4 N 3 , Zr 6 N 5 , Zr 8 N 7 , Zr 15 N 16 , Zr 7 N 8 , and Zr 4 N 5 ) at ambient pressure . Up to now, only three stoichiometric ratios (ZrN 2 , ZrN 4 , ZrN 10 ) are studied in the nitrogen-rich region. , The systematic high pressure study on the nitrogen-rich region of the Zr-N system is vacant.…”
Section: Introductionmentioning
confidence: 99%
“…The NaCl-type ZrN with the superconducting properties has been reported in both theoretical and experimental studies. It also exhibits the outstanding properties in respect of mechanics, electricity, and optics. In a recent study, Yu et al predicted a series of thermodynamically stable Zr-N compounds (Zr 2 N, Zr 4 N 3 , Zr 6 N 5 , Zr 8 N 7 , Zr 15 N 16 , Zr 7 N 8 , and Zr 4 N 5 ) at ambient pressure . Up to now, only three stoichiometric ratios (ZrN 2 , ZrN 4 , ZrN 10 ) are studied in the nitrogen-rich region. , The systematic high pressure study on the nitrogen-rich region of the Zr-N system is vacant.…”
Section: Introductionmentioning
confidence: 99%
“…13 Although most TMN materials are metals, 8,14 c-TM 3 N 4 , g-TM 3 N 4 , o-Zr 3 N 4 , P3 1 21-TMN 2 , and P3 2 21-TMN 2 (TM = Ti, Zr, and Hf) have been shown to exhibit semiconductor properties. [15][16][17][18] Since the dielectric constants of c-Zr 3 N 4 (k = 8.37) 19 and o-Zr 3 N 4 (k = 10.23) 19 are significantly higher than that of SiO 2 (k = 3.90), 12 Zr 3 N 4 is considered to be a high-k material and plays a crucial role in the design of microelectronic devices. 19 Besides, the work function of a material depends not only on the nitrogen content in the system, but also on the crystal structure and volume of the material.…”
Section: Introductionmentioning
confidence: 99%
“…Increasing the nitrogen ratio and enhancing the hybridization of the Zr_d and N_p orbitals at the Fermi level may open the bandgap and generate semiconductor phases. For example, Xie et al 18 predicted two novel semiconductor phases in ZrN 2 with space groups of P3 1 21 and P3 2 21. Notably, similar to transition-metal tetraborides, [22][23][24][25] the 1 : 4 stoichiometry in the Zr-N system is experimentally possible due to the experimental appearance of diverse TMN 4 (TM = Mg, 26 Be, 27 and Fe 28,29 ) structures.…”
Section: Introductionmentioning
confidence: 99%