“…[7][8][9][10] Although both are electrically inert in the Si lattice (oxygen as an interstitial, (Oi) and carbon as a substitutional, (Cs)) they can affect the electrical properties of Si upon material possessing through the formation of various complexes (for example, thermal donors and oxygen precipitates created upon thermal treatments). 7,8,[11][12][13][14] Additionally, the C and O impurities lead to the formation of a number of complexes upon irradiation and/or implantation. Important among them are the VO, CiOi and CiCs pairs, which are electrical active and introduce levels in the Si lattice.…”