Handbook of Nanoscopy 2012
DOI: 10.1002/9783527641864.ch31
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Semiconductors and Semiconducting Devices

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“…[7][8][9][10] Although both are electrically inert in the Si lattice (oxygen as an interstitial, (Oi) and carbon as a substitutional, (Cs)) they can affect the electrical properties of Si upon material possessing through the formation of various complexes (for example, thermal donors and oxygen precipitates created upon thermal treatments). 7,8,[11][12][13][14] Additionally, the C and O impurities lead to the formation of a number of complexes upon irradiation and/or implantation. Important among them are the VO, CiOi and CiCs pairs, which are electrical active and introduce levels in the Si lattice.…”
Section: Introductionmentioning
confidence: 99%
“…[7][8][9][10] Although both are electrically inert in the Si lattice (oxygen as an interstitial, (Oi) and carbon as a substitutional, (Cs)) they can affect the electrical properties of Si upon material possessing through the formation of various complexes (for example, thermal donors and oxygen precipitates created upon thermal treatments). 7,8,[11][12][13][14] Additionally, the C and O impurities lead to the formation of a number of complexes upon irradiation and/or implantation. Important among them are the VO, CiOi and CiCs pairs, which are electrical active and introduce levels in the Si lattice.…”
Section: Introductionmentioning
confidence: 99%