Semiconductor Wires and Ribbons for High‐ Performance Flexible Electronics

Abstract

This article reviews the properties, fabrication and assembly of inorganic semiconductor materials that can be used as active building blocks to form high-performance transistors and circuits for flexible and bendable large-area electronics. Obtaining high performance on low temperature polymeric substrates represents a technical challenge for macroelectronics. Therefore, the fabrication of high quality inorganic materials in the form of wires, ribbons, membranes, sheets, and bars formed by bottom-up and top-down approaches, and the assembly strategies used to deposit these thin films onto plastic substrates will be emphasized. Substantial progress has been made in creating inorganic semiconducting materials that are stretchable and bendable, and the description of the mechanics of these form factors will be presented, including circuits in three-dimensional layouts. Finally, future directions and promising areas of research will be described.

Mechanical Analyses and Structural Design Requirements for Flexible Energy Storage Devices

“…For example, silicon ribbons with a thickness of 100 nm endure a bending strain of only 0.0005% with a bending radius curvature of 1 cm [120] and a bending strain of 0.7% at a bending radius of 7 µm; the latter bending strain is near the fracture limit of approximately 1%. [121] Similarly, other one-dimensional materials, such as Ge/Si core/shell nanowires [122] and SWCNTs [4] on flexible plastic substrates, also maintain their conductance even at a bending radius in a millimeter scale. Thus, with the adoption of simple mechanics design strategies, LIB and SC devices comprising nanomaterials with small thicknesses can reach good flexibility.…”

Research on flexible display at Ulsan National Institute of Science and Technology

“…7 This is because all materials exhibit increased flexibility when their thickness decreases. At UNIST, Park's research group has fabricated a stretchable and transparent backplane based on oxide semiconductor TFTs with graphene-Au nanotrough (AuNT) hybrid structured interconnect electrodes.…”

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

“…al. demonstrated the fabrication of thin and flexible nano-ribbons by using isotropic wet etch in a <111> Si or silicon-on-insulator (SOI) wafer then transferred onto a plastic substrate [32][33][34][35] . However, inherently transfer technology suffers from complexity with physical transferring of small silicon pieces and higher substrate cost.…”