Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films

Suh, Jae Yong; López, René; Feldman, L. C.; Haglund, Richard F.

doi:10.1063/1.1762995

Cited by 338 publications

(222 citation statements)

References 19 publications

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“…37 A vanadium-metal target is ablated in 250 mTorr of oxygen by a KrF excimer laser (repetition rate 25 Hz) at a wavelength of 248 nm and a fluence of 4 mJ/cm 2 . The as-grown films are nonstoichiometric with an approximate composition close to VO 1.7 .…”

Section: Methodsmentioning

confidence: 99%

Ultrafast insulator-metal phase transition in VO2studied by multiterahertz spectroscopy

et al. 2011

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The ultrafast photoinduced insulator-metal transition in VO 2 is studied at different temperatures and excitation fluences using multi-THz probe pulses. The spectrally resolved midinfrared response allows us to trace separately the dynamics of lattice and electronic degrees of freedom with a time resolution of 40 fs. The critical fluence of the optical pump pulse, which drives the system into a long-lived metallic state, is found to increase with decreasing temperature. Under all measurement conditions, we observe a modulation of the eigenfrequencies of the optical phonon modes induced by their anharmonic coupling to the coherent wave-packet motion of V-V dimers at 6.1 THz. Furthermore, we find a weak quadratic coupling of the electronic response to the coherent dimer oscillation resulting in a modulation of the electronic conductivity at twice the frequency of the wave-packet motion. The findings are discussed in the framework of a qualitative model based on an approximation of local photoexcitation of the vanadium dimers from the insulating state.

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Section: Methodsmentioning

confidence: 99%

Ultrafast insulator-metal phase transition in VO2studied by multiterahertz spectroscopy

et al. 2011

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“…So, understanding the origin of the hysteresis can lead to a better control of its properties. The VO 2 thermal hysteresis characteristics are found to vary between samples grown under different conditions, such as thickness of thin films 16 , growth temperature 17 , grain size 18 , and choice of substrate 3,19 . For example, in polycrystalline thin films and single crystals of VO 2 embedded in silicon, the hysteresis width grows with decreasing of the crystallite size 18 .…”

Section: Introductionmentioning

confidence: 99%

First-order reversal curve measurements of the metal-insulator transition inVO2: Signatures of persistent metallic domains

et al. 2009

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We have performed first order reversal curve measurements of the temperature-driven metalinsulator transition in VO2 thin films, which enable quantitative analysis of the hysteresis behavior. An unexpected tail-like feature in the contour plot of the reversal curve distribution indicates the existence of metallic domains, even at temperatures below the closing of the hysteresis. These domains interact with the surrounding medium and change the reversal path relative to a path from a fully insulating state. With this in mind, and assuming that such interaction persist through the entire phase transition, we develop a model where the driving force (or energy barrier) in charge of opening a hysteresis in VO2 are inter-domain interactions. This model is intrinsically different from the Preisach model usually used to describe hysteresis; given that it looks for the microscopic origin of the hysteresis, and provides physical parameters to characterize it.

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“…This is to demonstrate how the crystalline grains sizes affect the transition temperature, but seems to be contradicting with what have been reported in the literature so far. Suh et al [31] undertook a careful study of the SMT transition of VO 2 films on (1 0 0) silicon substrates as a function of annealing time and found that the microstructure of the films changed from nanocrystalline nearly amorphous to crystals with a diameter of 200 nm. In the early stages, the film showed that as the grain size increased, the SMT decreased, but hysteresis continued to increase.…”

Section: Resultsmentioning

confidence: 99%

Effect of Oxygen Deposition Pressure on the Structure and the Metal Insulator Transition in Pulsed Laser Deposited VO<SUB>2</SUB> Films on Soda Lime Glass

Ndiaye¹,

Thiam²,

Ngom³

et al. 2017

AJN

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Vanadium dioxide thin films nanostructures were synthesized by pulsed laser deposition on soda lime glass at a substrate temperature of 600°C and the effects of the oxygen deposition pressure on the crystalline structure and the phase transition characteristics of VO 2 nanostructured films were investigated. The structure and microstructure of the films have been examined by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Results indicate that the crystal structure of the films is strongly sensitive to the oxygen deposition pressure; exhibiting sharp a-axis diffraction peaks, showing a texturation along (1 0 0) plane. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition and hysteresis of the phase transition are described in terms of the morphology, grain boundary structure and crystal orientation. The sharpness of the transition and the hysteresis upon heating and cooling are found to be strong functions of the crystal structure and microstructure (grain size). Keywords:

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Semiconductor to metal phase transition in the nucleation and growth of VO2 nanoparticles and thin films

Cited by 338 publications

References 19 publications

Ultrafast insulator-metal phase transition in VO2studied by multiterahertz spectroscopy

Ultrafast insulator-metal phase transition in VO2studied by multiterahertz spectroscopy

First-order reversal curve measurements of the metal-insulator transition inVO2: Signatures of persistent metallic domains

Effect of Oxygen Deposition Pressure on the Structure and the Metal Insulator Transition in Pulsed Laser Deposited VO<SUB>2</SUB> Films on Soda Lime Glass

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