Semiconductor Temperature and Condition Monitoring Using Gate-Driver-Integrated Inverter Output Voltage Measurement

Schubert, Michael; Doncker, Rik W. De

doi:10.1109/tia.2020.2977875

Cited by 11 publications

(4 citation statements)

References 21 publications

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“…The purpose of on-line health condition monitoring of IGBT is to extract health status during regular operation of the (Sun, Gong, Du, Peng, Wang & Zhou, 2017) Saturation voltage drop Vce_sat (Avenas, Dupont, Baker, Zara & Barruel, 2015), (Singh, Anurag & Anand, 2017), (Schubert & De Doncker, 2020) Transconductance gm (Wang C., He, Wang, Li & Wu, 2020), (Wang K., Zhou, Sun & Du, 2020) On-resistance RCE(on) (Eleffendi, & Johnson, 2017) b) "transient" Parameter references dynamic change of gate current (Zhou, Zhou & Sun, 2013) peak gate current value IGpeak (Zhou et al, 2013), (Mandeya, Chen, Pickert, Naayagi & Ji, 2019) Voltage change rate dVce/dt , (Kexin, Mingxing, Linlin & Jian, 2014) Gate-emitter voltage change ΔVge (Hu Z., Ge, Xie, Zhang, Yao, Dai & Yang, 2019) Miller plateau duration (Hu Z. et al, 2019) Gate emitter threshold or pre-threshold voltage VGE(th) (Mandeya, Chen, Pickert & Naayagi, 2018), (Mandeya et al, 2019) Current rate of change dIc/dt (Sathik, Prasanth, Sasongko & Pou, 2019) c) Temperature based Parameter references Case temperature (Wang, Tian, Qiao, & Qu, 2016) junction temperature variation (Tian, Qiao, Wang, Gachovska, & Hudgins, 2014) estimation of thermal resistance between junction and ambient Rthja (Hu Z., Du & Wei, 2017), (Zhang J. et al, 2019a) Vce(on)…”

Section: Condition Monitoring Methodsmentioning

confidence: 99%

Power Devices Health Condition Monitoring: A Review of Recent Papers

Foube

2021

PHME_CONF

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Power semiconductor devices with adjacent interconnection structures are recognized as the most fragile components of power electronic systems. Condition monitoring addresses this fragility by developing methods and technologies for assessing the component’s state of the health. This paper aims to provide entry points to comprehensive, state of the art references on this complex subject, which has been the subject of an extensive research over the last two decades. An overview of the current state of the art in condition monitoring of power devices (IGBT, MOSFETs) is given with focus on current induced degradation (active thermal cycling). Degradation indicators and temperature sensitive parameters are discussed, as well as their sensibilities to different parameters. Important practical aspects for the use of these indicators in monitoring system are pointed out. The conclusion provides discussion on industrial application perspective of the presented methods.

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Section: Condition Monitoring Methodsmentioning

confidence: 99%

Power Devices Health Condition Monitoring: A Review of Recent Papers

Foube

2021

PHME_CONF

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“…Due to the piece-wise linearity of the v DS -i D curve, a recursive least square (RLS) estimation may be used to identify the linear relation between v DS,ON and i D , i.e., the ON-state resistance. This method is currently regraded as the state of the art solution [23], [27].…”

Section: A Rls-based Estimationmentioning

confidence: 99%

“…A similar estimation method has been proposed in [27] and [28], however, the accuracy of the proposed solutions have not been compared with accurate references, and the sensitivity of the solutions have not been investigated in different operational conditions.…”

Section: A Rls-based Estimationmentioning

confidence: 99%

A Novel ON-State Resistance Estimation Technique for Online Condition Monitoring of Semiconductor Devices Under Noisy Conditions

Asoodar,

Nahalparvari,

Schneider

et al. 2024

IEEE Open J. Instrum. Meas.

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This article presents a novel method for accurate online extraction of semiconductor ON-state resistance in the presence of measurement noise. In this method, the ON-state resistance value is extracted from the measured ON-state voltage of the semiconductors and the measured load current. The extracted ON-state resistance can be used for online condition monitoring of semiconductors. The proposed method is based on extraction of selective harmonic content. The estimated values are further enhanced through an integral action that increases the signal-to-noise ratio, making the proposed method suitable in the presence of noisy measurements. These efficacy of the proposed method is verified through simulations in the MATLAB/Simulink environment, and experimentally. The estimated ON-state resistance values from the online setup are compared to offline measurements from an industrial curve tracer, where an overall estimation error of less than 1% is observed. The proposed solution maintains its estimation accuracy under variable load conditions and for different temperatures of the device under test.

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“…An advanced approach for thermal condition monitoring through the estimation of the ON-state resistance was also proposed in [30], where the authors extended gate driver circuit of each inverter leg with additional measuring circuit including two-channel analog to digital converter (ADC) and two operational amplifiers. The ADC measures leg input (dc-link) and output (phase) voltages sending the data to MCU via serial peripheral interface (SPI).…”

Section: State Of the Artmentioning

confidence: 99%

Inverter Temperature Monitoring of Cordless Tool Motor Drives

Dianov¹

2023

IEEE Open J. Ind. Electron. Soc.

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Nowadays, with the recent advances in battery technologies, cordless tools are gaining more popularity and many manufacturers have enhanced their series of autonomous devices with powerful instruments like circular saws and punches. However, the development of battery-operated tools is not an easy task and many challenging problems must be solved. The most significant of these are limited working time without recharging and controllability of the motor drives. As a result, tool manufacturers are substituting conventional universal motor drives with permanent magnet synchronous motor drives, which require more complicated electronics, but can provide the desired characteristics. In order to guarantee normal operation and satisfy safety standards, devices have to properly handle any possible hazardous situations. One of these situations is overheating of inverter switches, thus, the temperature of each transistor has to be monitored. This task is typically implemented using negative temperature coefficient (NTC) resistors, whereby voltage is sensed by analog to digital converter of microcontroller. This article proposes a software algorithm for temperature estimation and monitoring of each inverter switch, which allows excludes NTCs, decreasing overall costs and saving space on the printed circuit board. Proper operation of the developed technology is proven by the experimental results and safety certification according to UL60730.

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Semiconductor Temperature and Condition Monitoring Using Gate-Driver-Integrated Inverter Output Voltage Measurement

Cited by 11 publications

References 21 publications

Power Devices Health Condition Monitoring: A Review of Recent Papers

Power Devices Health Condition Monitoring: A Review of Recent Papers

A Novel ON-State Resistance Estimation Technique for Online Condition Monitoring of Semiconductor Devices Under Noisy Conditions

Inverter Temperature Monitoring of Cordless Tool Motor Drives

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