Semiconductor photoelectric converters for the ultraviolet region of the spectrum

Blank, Tanya; Goldberg, Yu. A.

doi:10.1134/1.1610111

Cited by 72 publications

(28 citation statements)

References 197 publications

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“…Hexagonal WO 3 nanowire, ultraviolet, photodetector Since discovery of ultraviolet (UV) radiation, the applications of UV light in biotechnology, medical applications, astronomy, and materials science research have been an active research area [1]. In these activities, much attention has been paid to the issue of the safety of UV radiation.…”

Section: Introductionmentioning

confidence: 99%

Ultraviolet photoconductance of a single hexagonal WO3 nanowire

et al. 2010

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The ultraviolet (UV) photoconductance properties of a single hexagonal WO 3 nanowire have been studied systematically. The conductance of WO 3 nanowires is very sensitive to ultraviolet B light and a field-effect transistor (FET) nanodevice incorporating a single WO 3 nanowire exhibits excellent sensitivity, reversibility, and wavelength selectivity. A high photoconductivity gain suggests that WO 3 nanowires can be used as the sensing element for UV photodetectors. Measurements under UV light in vacuum show that the adsorption and desorption of oxygen molecules on the surface of the WO 3 nanowire can significantly influence its photoelectrical properties. The WO 3 nanowires have potential applications in biological sensors, optoelectronic devices, optical memory, and other areas. KEYWORDSHexagonal WO 3 nanowire, ultraviolet, photodetector Since discovery of ultraviolet (UV) radiation, the applications of UV light in biotechnology, medical applications, astronomy, and materials science research have been an active research area [1]. In these activities, much attention has been paid to the issue of the safety of UV radiation. UV irradiation of human bodies can damage DNA structure, suppress the immune system, and increase skin photoaging, leading to an increasing number of cancer cases [2]. Therefore, highefficiency and low-energy consumption UV detectors are in high demand. Nano-photodetectors based on one-dimensional wide bandgap semiconductor materials in the form of nanowires, nanotubes, or nanofibers have been demonstrated to have very attractive performances due to the low dimensions and large surface-to-volume ratios of such nanomaterials [3][4][5][6]. To date, photoconductance based on wide bandgap semiconductors, for example, GaN, ZnO, Ga 2 O 3 , and Si 3 N 4 nanostructures, has been employed for UV detection [7][8][9][10].Tungsten oxide (WO 3 ), a very important type of semiconductor material, has been extensively investigated due to its promising physical and chemical properties [11][12][13][14]. By virtue of its outstanding electrochromic, optochromic, and gasochromic properties, in the past few decades WO 3 has been used to manufacture various devices such as flat-panel displays, electrochromic "smart" windows, optical modulation devices, write-read-erase optical devices, gas sensors, and field emission devices [15][16][17]. WO 3 is a potential material for detecting UV radiation because it has an indirect large energy band gap Nano Res (2010) 3: 281-287

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Section: Introductionmentioning

confidence: 99%

Ultraviolet photoconductance of a single hexagonal WO3 nanowire

et al. 2010

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“…Wide-bandgap II-VI materials, such as CdTe, ZnTe, CdSe, ZnSe, and CdS are typically used for visible light detection. Among the compound semiconductors, the CdS is the most promising material for detecting visible radiation due to its primary band gap of 2.4 eV (516 nm) and high sensitivity [1][2][3][4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Highly sensitive photosensor based on in situ synthesized CdS nanowires

Chang

Kim

et al. 2015

Sensors and Actuators B: Chemical

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“…One can see that photosensitivity is practically absent in the UV spectral region because of light and recombination losses of photocurrent in the thick ZnTe layer. Curve 2 corresponds to spectral sensitivity of PEC with optimal ZnTe layer thickness: d ≤ w. Therefore, the studied sensors do not rank below the well known analogs [5] in absolute values of photocurrent in the UV spectral region.…”

Section: Energy Band Offset Diagrams Of Heterostructures and Photocurmentioning

confidence: 99%

“…Interest to p-ZnTe as a promising material for semiconductor photoelectronics is determined by both its wide gap E g = 2.26 eV (similarly to the well known GaP UV photoelectric converters (PEC) [5] with E g = 2.25 eV) and possibility of making an abrupt р-ZnTe/ n-CdSe heterojunction. The same crystal structure of two semiconductors (ZnTe and CdSe) and a small mismatch of their lattice parameters (less than 1%) are necessary conditions for making a high-quality heterojunction.…”

Section: Introductionmentioning

confidence: 99%

ZnTe-based UV sensors

Pavelets¹

2016

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract.A р-ZnTe/n-CdSe heterojunction was used for making polycrystalline ZnTebased UV sensors. The heteropair components have the same crystal structure and close lattice parameters. ZnTe and CdSe were grown using thermal evaporation and quasiclosed space condensation. A transparent current collecting electrode for the surfacebarrier structure of р-ZnTe/n-CdSe heterojunction was made of degenerate p-Cu 1.8 S. Surface relief of ZnTe grown on different substrates was studied with scanning atomic force microscopy. The energy band offset diagrams of heterojunction are built and photosensitivity spectra are presented.

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Semiconductor photoelectric converters for the ultraviolet region of the spectrum

Cited by 72 publications

References 197 publications

Ultraviolet photoconductance of a single hexagonal WO3 nanowire

Ultraviolet photoconductance of a single hexagonal WO3 nanowire

Highly sensitive photosensor based on in situ synthesized CdS nanowires

ZnTe-based UV sensors

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