2007 9th International Conference on Transparent Optical Networks 2007
DOI: 10.1109/icton.2007.4296137
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Semiconductor Optical Amplifiers for FTTx

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Cited by 16 publications
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“…Transmitted optical power (TOP) could be increased to achieve the required link power budget. An electro absorption modulated laser (EML) boosted by an external semiconductor optical amplifier (SOA) can be placed at the TX side to increase launch power in PONs for a wide wavelength range of 1200-1650 nm [26]. For a 50G PON, EML + SOA was exploited DS to support high budget classes.…”
Section: Introductionmentioning
confidence: 99%
“…Transmitted optical power (TOP) could be increased to achieve the required link power budget. An electro absorption modulated laser (EML) boosted by an external semiconductor optical amplifier (SOA) can be placed at the TX side to increase launch power in PONs for a wide wavelength range of 1200-1650 nm [26]. For a 50G PON, EML + SOA was exploited DS to support high budget classes.…”
Section: Introductionmentioning
confidence: 99%
“…In order to reduce the deployment and the operation costs, the use of optical amplifier to extend reach and splitting ratio in future PON systems are discussed [1]. Among the proposed solutions, semiconductor optical amplifiers (SOA) appear to be efficient and cost-effective for multiple-wavelength networks [2]. The use of a single SOA for budget extension of coexisting gigabit-capable PON (G-PON) and 10-gigabit-capable PON (XG-PON) was demonstrated [3].…”
Section: Introductionmentioning
confidence: 99%
“…Among the proposed ones are the midway amplifiers (Fig. 1b), such as EDFA [6] and semiconductor optical amplifiers (SOA) [7][8][9], Raman amplification [10,11], and nonamplifier based coherent detection [12] techniques. For example, the use of a single SOA for optical budget increase of coexisting gigabit-capable PON (G-PON) and 10-gigabit-capable PON (XG-PON) is shown in [9].…”
Section: Introductionmentioning
confidence: 99%