Semiconductor Nanostructures for Infrared Applications

Žurauskienė, N.; Ašmontas, Steponas; Dargys, A.; Kundrotas, J.; Janssen, G.; Goovaerts, E.; Marcinkevičius, Stanislovas; Koenraad, PM Paul; León, R.

doi:10.4028/www.scientific.net/ssp.99-100.99

Cited by 4 publications

(2 citation statements)

References 25 publications

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“…When bulk Si is reduced to nanoscale, the zero-phonon optical transitions are moderately permitted. These zero-phonon optical transitions increase the radiative recombination rate through a band-to-band recombination process. − In Si NPs enlargement of energy difference between the eigen states leads to increased band gap. Consequently quantum confinement effects , render efficient photoluminescence (PL) in the visible region. , Especially, Si NPs being microelectronic compatible photonic materials have attracted more attention due to their size dependent PL with the prosperity of silicon surface chemistry .…”

Section: Introductionmentioning

confidence: 99%

Femtosecond Ablation of Silicon in Acetone: Tunable Photoluminescence from Generated Nanoparticles and Fabrication of Surface Nanostructures

Hamad¹,

Podagatlapalli²,

Vendamani

et al. 2014

J. Phys. Chem. C

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Silicon (Si) nanoparticles (NPs) and self-organized high spatial frequency laser (HSFL) induced periodic surface structures were fabricated by means of femtosecond ablation of bulk Si target in acetone. The ablation was performed with ∼40 fs (fwhm) pulses and different input energies of ∼500, ∼200, ∼150, ∼100, ∼50, and ∼10 μJ. Fabricated NPs and nanostructures (NSs) were characterized by UV–visible absorption spectroscopy, photoluminescence (PL) spectroscopy, Raman spectroscopy, transmission electron microscopy, and field emission scanning electron microscopy. The average sizes of the NPs were estimated to be in the 4–135 nm range. From the PL studies of Si NPs of different sizes, we have observed a size-dependent shift toward blue spectral region. We could tune the observed PL peak in the spectral range of 440–515 nm. The crystalline and amorphous nature of the Si nanoparticles and nanostructures was investigated using selected area electron diffraction and Raman spectra. Complex refractive index, conduction band electron density of the Si NPs, estimated by measuring the effective spot size corresponding to each input energies, were observed to play a crucial role in determining the periodicity of HSFL induced periodic surface structures. Experimentally measured periodicity of gratings was in good agreement with the theory.

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Section: Introductionmentioning

confidence: 99%

Femtosecond Ablation of Silicon in Acetone: Tunable Photoluminescence from Generated Nanoparticles and Fabrication of Surface Nanostructures

Hamad¹,

Podagatlapalli²,

Vendamani

et al. 2014

J. Phys. Chem. C

View full text Add to dashboard Cite

show abstract

“…In addition, the QDSC can absorb the low-energy photons through the intermediate band, and it has a theoretical efficiency as high as 63.2 % [ 13 , 14 ]. The good irradiation resistance and ultra-high theoretical efficiency of QDSCs make them potentially applicable in space [ 15 , 16 ].…”

Section: Introductionmentioning

confidence: 99%