We present a time-resolved study of the logical operation of a polariton condensate transistor switch. Creating a polariton condensate (source) in a GaAs ridge-shaped microcavity with a non-resonant pulsed laser beam, the polariton propagation towards a collector, at the ridge edge, is controlled by a second weak pulse (gate), located between the source and the collector. The experimental results are interpreted in the light of simulations based on the generalized Gross-Pitaevskii equation, including incoherent pumping, decay, and energy relaxation within the condensate. 16 Further functionalities can be achieved creating polariton condensates and reducing the dimensionality by patterning the microcavities. Propagation of such condensates over macroscopic distances has been achieved in wire microcavities with very long polariton lifetimes. 17 The condensates can be conveniently manipulated using repulsive local potentials created by photogeneration of excitons. 18 Large band-width amplification of polariton condensates under non-resonant excitation has been proven by a proper location of the laser excitation spot to create a condensate close to the edge of a 1D microwire. 19 In these systems, thanks to their superfluid character, one can benefit from high lateral speed of propagation and ballistic transport without energy loss.Using wider microwire ridges, a polariton condensate transistor switch has been realised through optical excitation with two beams. 9 One of the beams creates a polariton condensate which serves as a source (S) of polaritons. Their propagation is gated using a second weaker gate beam (G) that controls the polariton flow by creating a local blueshifted barrier. The ON state of the transistor (no G) corresponds to forming a trapped condensate at the edge of the ridge (collector, C). The presence of G hinders the propagation of polaritons towards C, remaining blocked between S and G (OFF state). In this letter, we present a time-resolved study that provides a complete insight of the energy relaxation and dynamics of the condensed polariton propagation for the ON/OFF states of such a transistor switch. Our experiments are compared with a theoretical description of the polariton condensate transistor based on the generalized Gross-Pitaevskii equation, modified to account for incoherent pumping, decay, and energy relaxation within the condensate.We investigate a high-quality 5k/2 AlGaAs-based microcavity with a Rabi splitting X R ¼ 9 meV. Ridges have been sculpted through reactive ion etching with dimensions 20 Â 300 lm 2 (further information about this sample is given in Refs. 20 and 21). In our samples, lateral confinement is insignificant compared to the aforementioned, much thinner, 1D polariton wires. 17,19 The sample, mounted in a coldfinger cryostat and kept at 10 K, is excited with 2 ps-long light pulses from a Ti:Al 2 O 3 laser, tuned to the first highenergy Bragg mode of the distributed Bragg reflector (1.612 eV). The chosen ridge is in a region of the sample corresponding to resonanc...