Semiconductor-metal transition in FeSi in ultrahigh magnetic fields up to 450 T

Kudasov, Yu. B.; Быков, А. И.; Dolotenko, M.I.; Kolokol'Chikov, N. P.; Monakhov, M. P.; Маркевцев, И. М.; Platonov, V.V.; Селемир, В. Д.; Tatsenko, O. M.; Filippov, A. V.; Volkov, A. G.; Povzner, A. A.; Bayankin, P. V.; Guk, V. G.

doi:10.1134/1.567872

Cited by 30 publications

(14 citation statements)

References 8 publications

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“…For example, by taking into account the effect of spin fluctuations, the concept of temperature-induced localized moment was introduced, 2, 3) while the Kondo insulator model, 4) which was originally applied to unstable 4f electron systems, attracted much attention as a fascinating scenario. A semiconductor-metal transition observed in an extremely strong magnetic field 5) may be a recent topic in this field. The application-oriented research of FeSi, stimulated by the outbreak of spintronics, has also been reported recently.…”

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confidence: 99%

Pseudogap in YMn₄Al₈

2004

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Pseudogap in YMn₄Al₈

2004

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“…Subsequently, measurements in ultra-high fields (cf. the discussion in Section (I B 2 b)) confirmed the existence of a discontinuous metamagnetic semiconductor-to-metal transition with B c ≈ 355T and T c < 77K [162,163].…”

Section: B Band-structures and Many-body Perturbation Theorymentioning

confidence: 54%

“…[159]. 12 Indeed, a ferromagnetic state can also be reached by doping, Fe 1−x CoxSi [99][100][101][102], expansion of the lattice by chemical pressure, FeSi 1−x Gex [96,97], as well as ultra-high magnetic fields [162,163] (cf. the discussion below).…”

Section: Charge Degrees Of Freedommentioning

confidence: 99%

“…Alternatively, a positive MR could be due to the proximity to a ferromagnetic instability. 15 Using ultra-high magnetic fields of up to spectacular 450T as produced by an explosively pumped flux compression generator, Kudasov et al [162,163] found the resistivity of FeSi to continuously decrease by several orders of magnitude. While at T = 77K the semi-conductor Note however, that numerical calculations for the Kondo lattice model [164] and the periodic Anderson model [165] suggest that with an applied magnetic field the spin gap collapses and a transverse AF order develops, while the charge gap remains finite up to higher fields.…”

Section: Charge Degrees Of Freedommentioning

confidence: 99%

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Thermoelectricity in correlated narrow-gap semiconductors

Tomczak

2018

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We review many-body effects, their microscopic origin, as well as their impact onto thermoelectricity in correlated narrow-gap semiconductors. Members of this class-such as FeSi and FeSb2display an unusual temperature dependence in various observables: insulating with large thermopowers at low temperatures, they turn bad metals at temperatures much smaller than the size of their gaps. This insulator-to-metal crossover is accompanied by spectral weight-transfers over large energies in the optical conductivity and by a gradual transition from activated to Curie-Weiss-like behaviour in the magnetic susceptibility. We show a retrospective of the understanding of these phenomena, discuss the relation to heavy-fermion Kondo insulators-such as Ce3Bi4Pt3 for which we present new results-and propose a general classification of paramagnetic insulators. From the latter FeSi emerges as an orbital-selective Kondo insulator. Focussing on intermetallics such as silicides, antimonides, skutterudites, and Heusler compounds we showcase successes and challenges for the realistic simulation of transport properties in the presence of electronic correlations. Further, we advert to new avenues in which electronic correlations may contribute to the improvement of thermoelectric performance.

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“…Kudasov etal. developed a simpler configuration for contactless measurement, which uses only a single coil at an end of the transmission line of the RF wave 5 . The reflectivity of the RF wave at the coil depends greatly on the sample that is electromagnetically coupled to the coil.…”

Section: Introductionmentioning

confidence: 99%

Self-resonant Coil for Contactless Electrical Conductivity Measurement under Pulsed Ultra-high Magnetic Fields

Nakamura,

Altarawneh,

Takeyama

2014

Preprint

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In this study, we develop experimental apparatus for contactless electrical conductivity measurements under pulsed high magnetic fields over 100 T using a self-resonanttype high-frequency circuit. The resonant power spectra were numerically analyzed, and the conducted simulations showed that the apparatus is optimal for electrical conductivity measurements of materials with high electrical conductivity. The newly developed instruments were applied to a high-temperature cuprate superconductor La 2−x Sr x CuO 4 to show conductivity changes in magnetic fields up to 102 T with a good signal-to-noise ratio. The upper critical field was determined with high accuracy.

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Semiconductor-metal transition in FeSi in ultrahigh magnetic fields up to 450 T

Cited by 30 publications

References 8 publications

Pseudogap in YMn₄Al₈

Pseudogap in YMn₄Al₈

Thermoelectricity in correlated narrow-gap semiconductors

Self-resonant Coil for Contactless Electrical Conductivity Measurement under Pulsed Ultra-high Magnetic Fields

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Semiconductor-metal transition in FeSi in ultrahigh magnetic fields up to 450 T

Cited by 30 publications

References 8 publications

Pseudogap in YMn4Al8

Pseudogap in YMn4Al8

Thermoelectricity in correlated narrow-gap semiconductors

Self-resonant Coil for Contactless Electrical Conductivity Measurement under Pulsed Ultra-high Magnetic Fields

Contact Info

Product

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Pseudogap in YMn₄Al₈

Pseudogap in YMn₄Al₈