1995
DOI: 10.1088/0953-8984/7/37/010
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Semiconductor-metal transition and the onset of itinerant ferromagnetism in the Heusler phases TiCoSn-TiCoSb

Abstract: The magnetic and transport properties of the TiCoSnxSb1-x solid solutions with the cubic MgAgAs structure have been studied, and show the onset of ferromagnetism associated with a semiconductor to metal transition, keeping the same 3d elements and varying the number of s-p electrons. The transition from TiCoSn ferromagnetic metal to the non-magnetic semiconductor TiCoSb occurs through an intermediate metallic Pauli-like state. The variations of the Curie temperature as a function of saturation and effective pa… Show more

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Cited by 36 publications
(41 citation statements)
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“…It seems that these impurity phases are due to the evaporation of antimony at arc melting. Each lattice parameter of TiCoSb, ZrCoSb, and HfCoSb is 0.58845, 0.60648, and 0.60411 nm, respectively, which almost agree with the literature data of TiCoSb, 1,2,8,[18][19][20][21] and ZrCoSb and HfCoSb. 3,30) We detected the impurity phases on TiCoSb 28) and HfCoSb but not for ZrCoSb from the surface observation by SEM.…”
Section: Resultssupporting
confidence: 87%
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“…It seems that these impurity phases are due to the evaporation of antimony at arc melting. Each lattice parameter of TiCoSb, ZrCoSb, and HfCoSb is 0.58845, 0.60648, and 0.60411 nm, respectively, which almost agree with the literature data of TiCoSb, 1,2,8,[18][19][20][21] and ZrCoSb and HfCoSb. 3,30) We detected the impurity phases on TiCoSb 28) and HfCoSb but not for ZrCoSb from the surface observation by SEM.…”
Section: Resultssupporting
confidence: 87%
“…3. In comparison to the value of the hightemperature resistivity reported in the literatures, 8,19,20,24,28,31) our measured values are rather small. The lowest resistivity is measured on HfCoSb.…”
Section: Resultscontrasting
confidence: 75%
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“…The half-Heusler compounds CoMnSb, NiMnSb and CoTiSb have been synthesized by arcmelting of proper amounts of the constituents under purified argon atmosphere [4,5]. The same preparation procedure has been used to produce the polycrystalline samples of GdAuSn, MnAuSn and the granular material consisting of their mixture.…”
Section: Methodsmentioning
confidence: 99%