SEMICONDUCTOR MASER OF GaAs

Quist, T.M.; Rediker, R. H.; Keyes, R. J.; Krag, W. E.; Lax, B.; McWhorter, Alan L.; Zeigler, H. J.

doi:10.1063/1.1753710

Cited by 422 publications

(55 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Then after 5 years, five research groups published their successes in realizing semiconductor lasers. These included IBM, 3) Lincoln Laboratories in MIT, 4) RCA, 5) and General Electric, 6) and were all the result of military contracts. The author was very disappointed.…”

Section: Introductionmentioning

confidence: 99%

Development of THz wave oscillation and its application to molecular sciences

Nishizawa

2004

Proceedings of the Japan Academy. Ser. B: Physical and Biologic

View full text Add to dashboard Cite

Abstract:In 1967, a THz wave was generated for the first time using a free electron laser; however, the device was too expensive to be used widely. The author published the idea of THz wave generation by use of resonating vibration between paired atoms in polymer or crystal in 1965, and succeeded with K. Suto to generate a 12 THz wave in 1983. In 1999, the author invited K. Kawase and H. Ito to Sendai RIKEN to realize the concept by use of dielectrics; in 2000, they succeeded in realizing a sweep generator. In the same year, the author suggested the idea of applying the THz wave to cancer diagnosis and treatment, particularly by improving heating selectivity: This enhances the effect of medications by raising only the temperature of the cancer itself, not of the surrounding atomic pairs in the neighborhood. These applications are expected to spread quickly as powerful methodology based on molecular science. The reason for this is that the much improved waveform generated enables higher selectivity, allowing the detection of the existence of abnormal polymer near the paired atoms by measuring resonating frequency between paired atoms.

show abstract

Section: Introductionmentioning

confidence: 99%

Development of THz wave oscillation and its application to molecular sciences

Nishizawa

2004

Proceedings of the Japan Academy. Ser. B: Physical and Biologic

View full text Add to dashboard Cite

show abstract

“…A few years later, Hall et al, Nathan et al, and Quist et al claimed the first realization of semiconductor lasers [2][3][4] almost simultaneously. Semiconductor lasers are key elements in applications, such as laser printers, pumping light, optical sensors, optical storage, medical inspection, and optical communications.…”

mentioning

confidence: 99%

Semiconductor lasers for high-speed information technologies (Invited Paper)

Zhu

2017

中国光学快报

View full text Add to dashboard Cite

show abstract

“…In general, using a semiconductor that can form p-n junctions allows straightforward fabrication of light-emitting diodes and laser diodes [2][3][4][5]; however, this is difficult in the case of ZnO. The reason why is that it is difficult to form a p-type crystal because the acceptors are compensated due to the numerous oxygen vacancies and interstitial zinc in the ZnO crystal acting as donors [6].…”

mentioning

confidence: 99%

Homojunction-structured ZnO light-emitting diodes fabricated by dressed-photon assisted annealing

2012

View full text Add to dashboard Cite

We formed a p-n homojunction by implanting nitrogen ions, serving as a p-type dopant, into an n-type ZnO crystal. A forward bias current was injected into the crystal while irradiating it with light, bringing about Joule heating which annealed the crystal and changed the spatial distribution of the N-dopant concentration. This activated the N-dopant, causing its concentration distribution to be modified in a self-organized manner so as to be suitable for generating dressed photons. A light-emitting diode fabricated by this dressed-photon assisted annealing method showed electroluminescence at room temperature. In a device fabricated by annealing under irradiation with 407 nmwavelength light, at a forward bias current of 20 mA, the peak wavelength of the electroluminescence was 436 nm, the optical output power was 6.2 µW, and the external quantum efficiency was 1.1 × 10 −4 . The emission spectral profile depended on transitions from intermediate phonon states.

show abstract

SEMICONDUCTOR MASER OF GaAs

Cited by 422 publications

References 4 publications

Development of THz wave oscillation and its application to molecular sciences

Development of THz wave oscillation and its application to molecular sciences

Semiconductor lasers for high-speed information technologies (Invited Paper)

Homojunction-structured ZnO light-emitting diodes fabricated by dressed-photon assisted annealing

Contact Info

Product

Resources

About