SEMICONDUCTOR MASER OF GaAs

Quist, T.M.; Keyes, R. J.; Krag, W. E.; Lax, B.; Whorter, A. L. Mc; Rediker, R. H.; Zeiger, H. J.

doi:10.1142/9789814503464_0121

Cited by 9 publications

(9 citation statements)

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“…Since their advent in 1962, [1][2][3] semiconductor lasers have found applications in many optical systems, including bar-code scanners, laser printers, telecommunication systems, compact-disc players, and optical sensors. However, for high-precision atom absorption spectroscopy or gas analysis, wavelength tuning and spectral characteristics of commercially available standard laser diodes ͑LDs͒ are often far from ideal.…”

Section: Introductionmentioning

confidence: 99%

Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy

Hildebrandt¹,

Knispel²,

Stry³

et al. 2003

Appl. Opt.

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Commercially available GaN-based laser diodes were antireflection coated in our laboratory and operated in an external cavity in a Littrow configuration. A total tuning range of typically 4 nm and an optical output power of up to 30 mW were observed after optimization of the external cavity. The linewidth was measured with a beterodyne technique, and 0.8 MHz at a sweep time of 50 ms was obtained. The mode-hop-free tuning range was more than 50 GHz. We demonstrated the performance of the laser by detecting the saturated absorption spectrum of atomic indium at 410 nm, allowing observation of well-resolved Lamb dips.

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Section: Introductionmentioning

confidence: 99%

Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy

Hildebrandt¹,

Knispel²,

Stry³

et al. 2003

Appl. Opt.

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“…It is a well-known fact that light and all other colours can be produced by a combination of the three primary colours red, green, and blue, yet the blue diode was still missing. This diode was invented in 1994 and since then applications of the LEDs increased hugely in photonic technologies (125).…”

Section: Modern Periodmentioning

confidence: 99%

From Hyperion to photon, a brief survey in the timeline of photon

Hossieni¹,

Fatah²,

Mohammad³

et al. 2018

phys essays

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We present in this paper a chronological study on the main line of the electromagnetic radiation throughout the history of mankind. This history is divided into three distinct eras: pre-classical, classical, and modern era. In pre-classical era, myths are studied starting with Hyperion (god of lightning), extramission theory, and Euclid principles. While in the classical era, the main focus is on classical theories of physics through introducing the Maxwell equations and Huygens and Newton's theories on light. In addition, aspects of light via particle and wave theories are reviewed. Special relativity, photoelectric effect and radiation in quantum mechanics are the studied topics in the modern era. We present the advancement in photonic science from the last century till present time and show its influences on fields such as laser, quantum field theory, holographs, LED, and entanglement.

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“…GaAs has also played a main role in the development of optoelectronic applications and devices. Since a direct gap is necessary for an efficient light emission capability, Si and Ge are not competitors in the least, so that laser action was first reported in 1962 using GaAs [8][9][10] and GaAsP [11] junctions. Moreover, compound semiconductors present the advantage that they can be alloyed, allowing a large tunability of the semiconductor band gap and the realization of the double heterostructure (DHS) as the active region of a semiconductor laser [12,13].…”

Section: Motivation: State Of the Artmentioning

confidence: 99%

Tuning the properties of InAs/GaAs quantum dots through a modified capping layer: Application to optoelectronic devices

Lomas¹,

David²

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Quantum-dot (QD) technology has become a very transversal technology finding application in an increasing number of scientific and industrial fields. At the forefront of this development is the well-studied InAs/GaAs QD system. However, the limitations imposed by the fixed InAs-GaAs band offsets and by the difficulties to control the QD morphology due to the capping process still difficult the precise control of QD band structure that would allow the required design in different applications. The use of a certain capping layer (CL) material different than GaAs has been particularly employed to tune the ground state energy of InAs/GaAs QDs through strain and band structure engineering, so achieving the longwavelength telecommunication windows as one of the most pursued targets. This work is mainly focused on the achievement of a higher tunability of the properties of InAs/GaAs QDs by the application of thin GaAs(Sb)(N) CLs and the optimization of the capping process in order to improve their suitability to any optoelectronic device, and more in particular to laser diodes and solar cells. GaAs(Sb)(N)/InAs/GaAs QDs are a highly versatile system in which the use of Sb and N allows for the tunability of the QD ground state while providing a huge degree of freedom regarding the QD-CL band-alignment, according to the requirements of the field of application. quieren, por lo tanto, enfoques alternativos con el fin de mejorar la eficiencia de conversión. En particular, se demuestra que parámetros como la profundidad del pozo de potencial en el CL, su espesor, y su estructura, así como el alineamiento de bandas resultante, juegan un papel importante en la extracción y el transporte de portadores en células solares de QD.

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SEMICONDUCTOR MASER OF GaAs

Cited by 9 publications

References 0 publications

Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy

Antireflection-coated blue GaN laser diodes in an external cavity and Doppler-free indium absorption spectroscopy

From Hyperion to photon, a brief survey in the timeline of photon

Tuning the properties of InAs/GaAs quantum dots through a modified capping layer: Application to optoelectronic devices

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