Semiconductor Laser Using Multimode Interference (MMI) Principle

Abstract

Multimode interference (MMI) structure is introduced in semiconductor laser to realize higher power and shorter device length. We use BPM simulation in the device design. MMI-LD was fabricated and realized in InGaAsP/InP based material and output power of up to 2.296mW was achieved. The implemented MMI-LD exhibits stable singlemode output operating at a wavelength of 1.52µm at 10°C. As a comparison, conventional semiconductor laser using straight waveguide is also fabricated in the same wafer and the output power is 0.534mW. MMI-LD also shows better temperature tolerance due to the MMI wavelength selecting function.