Semiconductor laser crystallization of a-Si:H on conducting tin-oxide-coated glass for solar cell and display applications

Nayak, Barada K.; Eaton, B.; Selvan, J. A. Anna; McLeskey, James T.; Gupta, Mool C.; Romero, R.J.; Ganguly, Gautam

doi:10.1007/s00339-003-2352-9

Cited by 17 publications

(6 citation statements)

References 16 publications

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“…CW Nd:YAG lasers have been used to grown relatively large crystals (tens of μm wide and > 100 μm long) 35 , but the scanning speed are not adequate for commercialization. Other work 36,37 has focused on using CW diode lasers operating at about 806 nm, and by heating the a-Si coated borosilicate glass to 600°C, the scanning rate of a line focus (30 mm x 0.1 mm) laser was increased to several cm/s 37 .…”

Section: Other Laser Processes For Solar Cellsmentioning

confidence: 99%

Laser processing of solar cells

Carlson¹

2012

SPIE Proceedings

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Laser processing has a long history in the manufacturing of solar cells since most thin-film photovoltaic modules have been manufactured using laser scribing for more than thirty years. Lasers have also been used by many solar cell manufacturers for a variety of applications such as edge isolation, identification marking, laser grooving for selective emitters and cutting of silicon wafers and ribbons. In addition, several laser-processing techniques are currently being investigated for the production of new types of high performance silicon solar cells. There have also been research efforts on utilizing laser melting, laser annealing and laser texturing in the fabrication of solar cells. Recently, a number of manufacturers have been developing new generations of solar cells where they use laser ablation of dielectric layers to form selective emitters or passivated rear point contacts. Others have been utilizing lasers to drill holes through the silicon wafers for emitter-wrap-through or metal-wrap-through back-contact solar cells. Scientists at Fraunhofer ISE have demonstrated high efficiency silicon solar cells (21.7%) by using laser firing to form passivated rear point contacts in p-type silicon wafers. Investigators art both the University of Stuttgart and the University of New South Wales have produced high efficiency silicon solar cells using laser doping to form selective emitters, and some companies are now developing commercial products based on both laser doping and laser firing of contacts. The use of lasers in solar cell processing appears destined to grow given the advances that are continually being made in laser technology.

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Section: Other Laser Processes For Solar Cellsmentioning

confidence: 99%

Laser processing of solar cells

Carlson¹

2012

SPIE Proceedings

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“…In the field of laser materials processing the applied laser pulse duration ranges from femtoseconds up to continuous wave (CW) with different wavelengths. Since the thermally introduced effects decrease with shorter pulse duration, femto second (fs) laser material processing enables new applications in the field of a-Si:H [5][6][7]. In this study we investigate the material modification of a-Si:H deposited by plasma enhanced chemical vapor deposition (PECVD) by means of femtosecond laser pulses.…”

Section: Introductionmentioning

confidence: 99%

Femtosecond laser materials processing of a-Si:H below the ablation threshold

Soleymanzadeh

Beyer²,

Luekermann

et al. 2014

MRS Proc.

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Laser processing of thin-film silicon is a promising approach for the realization of polycrystalline silicon for large area electronics and solar cell applications. In this study we investigate the material modification of amorphous hydrogenated silicon (a-Si:H) with different hydrogen content (30%, 13% and <1%) by means of femtosecond (fs) laser pulses. Depending on the peak fluence applied, hydrogen diffusion/effusion, layer crystallization or material ablation can be achieved. Despite the low absorption coefficient of a-Si:H at the center wavelength of an amplified Titanium Sapphire laser at 790 nm a high local energy deposition close to the surface of the a-Si:H layer is observed, which can be attributed to a nonlinear absorption process.

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“…Various dependencies of the poly-Si characteristics on the laser processing parameters were reported recently: the size of the crystallites [27], crystallization area homogeneity [28], photoelectric properties [29], and surface morphology [30]. However, so far only a few studies reported utilization of near-IR radiation for laser-induced crystallization of α-Si films providing information regarding optical properties of the annealed poly-Si films [26,[31][32][33].…”

Section: Introductionmentioning

confidence: 99%

Crystallization of optically thick amorphous silicon films by near-IR femtosecond laser processing

Bronnikov¹,

Dostovalov²,

Cherepakhin³

et al. 2020

Preprint

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Amorphous silicon (α-Si) film present an inexpensive and promising material for optoelectronic and nanophotonic applications. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. Infrared femtosecond laser radiation can be considered as a promising nondestructive and facile way to drive uniform in-depth and lateral crystallization of α-Si films that are typically opaque in UV-visible spectral range. However, so far only a few studies reported on utilization of near-IR radiation for laser-induced crystallization of α-Si providing no information regarding optical properties of the resultant polycrystalline Si films. The present work demonstrates efficient and gentle single-pass crystallization of α-Si films induced by their direct irradiation with near-IR femtosecond laser pulses coming at sub-MHz repetition rate. Comprehensive analysis of morphology and composition of laser-annealed films by atomic-force microscopy, optical, micro-Raman and energy-dispersive X-ray spectroscopy, as well as numerical modeling of optical spectra, confirmed efficient crystallization of α-Si and high-quality of the obtained films. Moreover, we highlight localized laser-driven crystallization of α-Si as a promising way for optical information encryption, anti-counterfeiting and fabrication of micro-optical elements.

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Semiconductor laser crystallization of a-Si:H on conducting tin-oxide-coated glass for solar cell and display applications

Cited by 17 publications

References 16 publications

Laser processing of solar cells

Laser processing of solar cells

Femtosecond laser materials processing of a-Si:H below the ablation threshold

Crystallization of optically thick amorphous silicon films by near-IR femtosecond laser processing

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