Semiconductor detector with smoothly tunable effective thickness for the study of ionization loss by moderately relativistic electrons

Frequency splitting in undulator radiation from solid-state crystalline undulator

“…The dechanneling length of electrons is much less in comparison to one of positrons as it was discussed in, e.g., refs. [21,22]. Positron beam can be used for production of undulator radiation in crystalline undulator.…”

Measurement of ionization loss of 50 GeV protons in silicon with smoothly tunable up to 1 cm thickness using a single flat detector

“…It is a flat square silicon detector of size 10 × 10 mm 2 with a dead layer thickness of no more than 1 μm. The depletion layer thickness was determined by measuring the detector capacitance [24,25]. In the present experiments, the thickness of the depleted layer was fixed and was equal to 300 μm at a detector supply voltage of +100 V. The detector was placed in a 150 μm thick steel shield to protect it from visible light and electromagnetic interference.…”

“…Meroli et al [23] studied ionization loss of 100 MeV electrons and 12 GeV protons in CMOS active pixel sensor at a small grazing angle with thickness ranging from 5.6 to 120 μm. Flat silicon detectors with a smoothly tunable thickness of depleted layers by the value of the bias voltage were applied in researches of ionization loss of 0.976 MeV electrons with thickness ranging from 123 to 346 μm [24], and 50 GeV protons with thickness ranging from 157 to 300 μm [25].…”