Semiconductor CdF2:Ga and CdF2:In Crystals as Media for Real-Time Holography

Ryskin, A. I.; Shcheulin, A. S.; Angervaks, A. E.

doi:10.3390/ma5050784

Cited by 4 publications

(3 citation statements)

References 51 publications

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“…Figure 1 shows that at E 0 = 0.5 keV, the intensity of the IF peak sharply (by a factor of ~ 4) decreases and it practically does not change up to a depth of h = 20-25 Å, which corresponds to the projected range of Ar + ions. It is also confirmed by the data presented in the work [15]. In this way, CdF 2 is goal decayed into components within the near-surface layer within the particle implantation.…”

Section: Resultssupporting

confidence: 80%

The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2

Аbduvayitov,

Imanova,

Tashmukhamedova

et al. 2023

Scientific Herald of Uzhhorod University Series Physics

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Relevance. In the case of bombardment with Mg metal ions, the changes are accompanied by the introduction of metal atoms and the formation of various types of compounds. Thus, CdF2 is intensively decomposed into components in the near-surface layer in the process of ion implantation. A small part of these components can be sprayed from the surface. Due to the high chemical activity, almost all of the liberated fluorine atoms again enter into a chemical bond with both the atoms of the alloying element and the atoms of cadmium. Consequently, three-component compounds are formed in the near-surface layer. Therefore, it is necessary to define the electronic states, band energy, and optical parameters of CdF2 and Cd0.6Mg0.4F2 films. Purpose. The composition, structure, and properties of CdF2 implanted with Mg+ ions in combination with thermal and laser annealing for the first time were the research aims. Methodology. The experimental studies were carried out at a vacuum of at least 10-7 Pa using the methods of Auger electron spectroscopy (AES) and ultraviolet photoelectron spectroscopy (UVES). The depth distribution profiles of atoms were determined by the AES method in combination with layer-by-layer etching of the surface with Ar+ ions with E0=2-3 keV. Results. CdF2 is intensively decomposed into components in the near-surface layer in the process of ion implantation. Consequently, three-component compounds are formed in the near-surface layer. Band-energy parameters and densities of the state of electrons in the valence band of this film are determined. Conclusions. The effect of the implantation of Mg+ ions on the composition and electronic structure of single-crystal CdF2/Si(III) films was studied for the first time. The densities of electronic states, band-energy and optical parameters of CdF2 and Cd0.6Mg0.4F2 films have been determined

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Section: Resultssupporting

confidence: 80%

The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2

Аbduvayitov,

Imanova,

Tashmukhamedova

et al. 2023

Scientific Herald of Uzhhorod University Series Physics

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“…16) [197]. Регистрация голограмм осуществлялась импульсным излучением второй гармоники неодимо-вого лазера (λ = 532 nm), а зондирование -излуче-нием гелий-неонового лазера (λ = 633 nm).…”

Section: фотохромные кристаллыunclassified

Современное Состояние Разработки Светочувствительных Сред Для Голографии (Обзор)

Барачевский¹

2018

Журнал Технической Физики

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“…The band gap energy and energy levels of CdF 2 can be tailored by doping with various ions. This compound can exhibit some semiconducting properties under specific conditions [13,14]. Doped with RE ions, CdF 2 exhibited strong luminescence properties, particularly in the visible and near-infrared regions.…”

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confidence: 99%

Luminescence properties of CdF₂ single crystals co‐doped with Er³⁺ and Y³⁺ ions

Boubekri,

Fartas,

Diaf

et al. 2024

Luminescence

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The luminescence properties of erbium and yttrium co‐doped cadmium difluoride with three different concentrations of yttrium were investigated. First, we synthesized single crystal samples with good optical quality using the Bridgman technique. From the optical absorption spectra, recorded at room temperature, both in the ultraviolet–visible and infrared spectral ranges, Judd–Ofelt analysis was performed based on yttrium concentrations to predict the radiative properties of Er3+ luminescent ions. For the 10% optimum concentration of yttrium, a detailed photoluminescence investigation was carried out. We mainly explored green, red, and near‐infrared fluorescence under different excitation wavelengths and presented their highlight spectroscopic characteristics. The desired transitions had relatively high emission cross‐sections both under visible and near‐infrared excitation. Optical gain followed a similar trend. Furthermore, the dynamic fluorescence study showed a significant increase in the measured lifetime under an 800 nm infrared excitation. The upconversion process under an 800 nm excitation produced quantum efficiency greater than 100% due to the contribution of more than one energy transfer mechanism.

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Semiconductor CdF2:Ga and CdF2:In Crystals as Media for Real-Time Holography

Cited by 4 publications

References 51 publications

The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2

The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2

Современное Состояние Разработки Светочувствительных Сред Для Голографии (Обзор)

Luminescence properties of CdF₂ single crystals co‐doped with Er³⁺ and Y³⁺ ions

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Semiconductor CdF2:Ga and CdF2:In Crystals as Media for Real-Time Holography

Cited by 4 publications

References 51 publications

The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2

The influence of implantation of Mg+ ions and subsequent annealing on the composition, electronic structures, emission and optical properties of CdF2

Современное Состояние Разработки Светочувствительных Сред Для Голографии (Обзор)

Luminescence properties of CdF2 single crystals co‐doped with Er3+ and Y3+ ions

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Luminescence properties of CdF₂ single crystals co‐doped with Er³⁺ and Y³⁺ ions