Semiconducting ZnSnxGe1−xN2 alloys prepared by reactive radio-frequency sputtering

Shing, Amanda M.; Coronel, Naomi C.; Lewis, Nathan S.; Atwater, Harry A.

doi:10.1063/1.4927009

Cited by 16 publications

(7 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…They are both lattice matched to GaN, and their calculated band gaps are direct and larger than GaN, 4.63 and 3.74 eV, respectively, which may be potentially suitable for UV optoelectronic applications. It should be noted that the formation of quaternary wurtzitic nitrides has been scarcely reported as claimed in their study, with only a few examples such as CaAlSiN 3 and CaGaSiN 3 , as well as alloyed thin films of Al x Ga 1– x – y In y N , and ZnSn x Ge 1– x N 2 . , …”

Section: Introductionmentioning

confidence: 78%

“…The band gap engineering of wurtzitic semiconductors covering the ultraviolet (UV) to near-infrared region for optoelectronic, photovoltaic, and photocatalytic applications has attracted considerable interest in recent years. − One strategy for the development is to make existing binary and ternary systems into a further multinary system, which is expected to possess higher compositional flexibility and, thus, more tunable physical properties. This methodology has been already adopted for the oxide semiconductors, e.g., LiGaO 2 –ZnO and β-AgGaO 2 –ZnO quaternary systems, which enabled the band gap tuning of ZnO in the UV (up to 5.6 eV) and visible (down to 2.2 eV) regions, respectively.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

2017

View full text Add to dashboard Cite

We developed a new quaternary wurtzitic nitride system by formation of the solid solution between ZnGeN 2 and GaN. Near stoichiometric and monophasic powder samples in the composition Zn 1−x Ge 1−x Ga 2x N 2 (x ≤ 0.50) were obtained by the reduction−nitridation synthesis conducted at 900 °C. The results of crystal structure refinement clearly revealed that the cation ordering in the structure of ZnGeN 2 (Pna2 1 ) tends to disappear by introducing Ga into the lattice, and the structure transforms to a simple wurtzite phase (P6 3 mc) with the composition of x ≥ 0.33. The observed structural evolution was further confirmed by the results of 71 Ga solid-state nuclear magnetic resonance (NMR) spectroscopy, showing an unsplit single peak observed for x ≥ 0.33. The dissolution of GaN into ZnGeN 2 also resulted in a marked narrowing of the band gap, from the ultraviolet region of 3.42 eV to the visible-light range of 3.02−3.05 eV, depending scarcely on the value of x. The results of photocatalytic test reactions for water splitting showed that the synthesized Zn 1−x Ge 1−x Ga 2x N 2 solid solution possessed the H 2 evolution rate of 2.8−3.6 μmol/h and the relatively high O 2 evolution rate of 100.4−126.6 μmol/h, as well as the capability for overall water splitting under the visible-light irradiation of λ > 400 nm.

show abstract

Section: Introductionmentioning

confidence: 78%

Section: Introductionmentioning

confidence: 99%

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

2017

View full text Add to dashboard Cite

show abstract

“…In the past decade, researchers have begun to investigate wurtzite-type II–IV–N 2 nitrides, including ZnSnN 2 , − Zn(Ge,Sn)N 2 , − and MgSnN 2 ,− as semiconductors for photovoltaics and light emitters. The cations in the sputtered ZnSnN 2 and MgSnN 2 films almost randomly occupy the cation sublattice in the wurtzite structure (disordered wurtzite structure), , as shown in Figure a (the crystal structure was visualized using the software VESTA).…”

Section: Introductionmentioning

confidence: 99%

Band Gap-Tunable (Mg, Zn)SnN₂ Earth-Abundant Alloys with a Wurtzite Structure

Yamada

Mizutani

Matsuura

et al. 2021

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

Herein, wurtzite-type MgSnN2–ZnSnN2 alloys (Mg x Zn1–x SnN2) are proposed as earth-abundant and band gap-tunable semiconductors with fundamental band gaps in the range of 1.5–2.3 eV. The alloys do not exhibit immiscibility, unlike the InN–GaN system, because the lattice mismatch between the endmembers is smaller than 1% in both a- and c-axis directions. The Mg x Zn1–x SnN2 alloys can be epitaxially grown on GaN(001) in the whole x range, and their fundamental band gap can be tuned from 1.5 to 2.3 eV with the increase in x from 0 to 1. Moreover, the Mg x Zn1–x SnN2 epilayers with x > 0.53 exhibit a green-light photoluminescence emission near room temperature, which indicates that they are direct-gap semiconductors. Direct-gap semiconductors with band gaps of 1.8–2.5 eV are eagerly anticipated for the development of green light-emitting diodes (LEDs) and top cells in high-efficiency tandem solar cells, though such wurtzite- or zincblende-type compounds that can be epitaxially integrated with conventional semiconductors are quite rare. Therefore, Mg x Zn1–x SnN2 alloys are attractive nitride semiconductors toward the development of green-LEDs and tandem solar cells.

show abstract

“…It has been demonstrated that similar to the well-known In x Ga x N system, the bandgap (E g ) of alloyed ZnSn x Ge 1−x N 2 was tunable from 3.1 to 2.0 eV by varying the Sn content (x) from 0 to 1 [3]. This makes Zn-IV-N 2 an intriguing semiconductor system, and studies on ZnSn x Ge 1−x N 2 as a counterpart to the In x Ga 1−x N system have been carried out in recent years [3,4].…”

Section: Introductionmentioning

confidence: 99%

Electron-transport properties of degenerate ZnSnN2 doped with oxygen

Cao

Kawamura

Taniguchi

et al. 2020

BMC Mat

View full text Add to dashboard Cite

In this study, analysis of the electron mobility in ZnSnN 2 epilayers that were unintentionally doped with oxygen (ZnSnN 2−x O x ) was performed to elucidate the reason for the low mobilities of ~ 20 cm 2 V −1 s −1 . While roughly 30% of the incorporated oxygen donated electrons, the rest existed as neutral impurities. Seebeck-effect measurements revealed that scattering by neutral impurities governed the electron transport. The theoretical mobility calculated taking into account the scattering by neutral impurities and ionized impurities reproduced the experimental Hall mobility. We concluded that the low electron mobility is attributed to the presence of the neutral oxygen impurities in high concentration.

show abstract

Semiconducting ZnSnxGe1−xN2 alloys prepared by reactive radio-frequency sputtering

Cited by 16 publications

References 22 publications

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Band Gap-Tunable (Mg, Zn)SnN₂ Earth-Abundant Alloys with a Wurtzite Structure

Electron-transport properties of degenerate ZnSnN2 doped with oxygen

Contact Info

Product

Resources

About

Semiconducting ZnSnxGe1−xN2 alloys prepared by reactive radio-frequency sputtering

Cited by 16 publications

References 22 publications

Quaternary Wurtzitic Nitrides in the System ZnGeN2–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Quaternary Wurtzitic Nitrides in the System ZnGeN2–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Band Gap-Tunable (Mg, Zn)SnN2 Earth-Abundant Alloys with a Wurtzite Structure

Electron-transport properties of degenerate ZnSnN2 doped with oxygen

Contact Info

Product

Resources

About

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Quaternary Wurtzitic Nitrides in the System ZnGeN₂–GaN: Powder Synthesis, Characterization, and Potentiality as a Photocatalyst

Band Gap-Tunable (Mg, Zn)SnN₂ Earth-Abundant Alloys with a Wurtzite Structure