Semiconducting black phosphorus

Morita, Akira

doi:10.1007/bf00617267

Cited by 558 publications

(625 citation statements)

References 34 publications

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“…1b. Using a layer-to-layer spacing of 0.53 nm 36 , we clearly identified BP with thicknesses down to around 1.2 nm, corresponding to two atomic layers of BP. However, these fewmicrometre scale bilayer BP flakes are usually too small for optical and electronic experiments.…”

Section: Resultsmentioning

confidence: 98%

“…As carbon atoms in graphene, each phosphorus atom is connected to three adjacent phosphorus atoms in BP to form a stable, linked ring structure, with each ring consisting of six phosphorus atoms. However, the puckered BP structure has reduced symmetry compared with graphite, resulting in its unique angle-dependent in-plane conductivities [33][34][35][36] . The adjacent layer spacing is around 0.53 nm and the lattice constant in this orthorhombic system along the z direction is 1.05 nm.…”

Section: Resultsmentioning

confidence: 99%

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Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

2014

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Graphene and transition metal dichalcogenides (TMDCs) are the two major types of layered materials under intensive investigation. However, the zero-bandgap nature of graphene and the relatively low mobility in TMDCs limit their applications. Here we reintroduce black phosphorus (BP), the most stable allotrope of phosphorus with strong intrinsic in-plane anisotropy, to the layered-material family. For 15-nm-thick BP, we measure a Hall mobility of 1,000 and 600 cm 2 V À 1 s À 1 for holes along the light (x) and heavy (y) effective mass directions at 120 K. BP thin films also exhibit large and anisotropic in-plane optical conductivity from 2 to 5 mm. Field-effect transistors using 5 nm BP along x direction exhibit an on-off current ratio exceeding 10 5 , a field-effect mobility of 205 cm 2 V À 1 s À 1 , and good current saturation characteristics all at room temperature. BP shows great potential for thin-film electronics, infrared optoelectronics and novel devices in which anisotropic properties are desirable.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

2014

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“…Some clear experimental evidences, 22,23 recently confirmed by the photoluminescence spectrum of its monolayer counterpart, 24 have indicated that BP follows a monotonic increase of the band-gap. This trend has been explained neither theoretically nor experimentally.…”

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confidence: 88%

Anomalous Temperature Dependence of the Band Gap in Black Phosphorus

2016

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Black Phosphorus (BP) has gained renewed attention due to its singular anisotropic electronic and optical properties that might be exploited for a wide range of technological applications. In this respect, the thermal properties are particularly important both to predict its room temperature operation and to determine its thermoelectric potential. From this point of view, one of the most spectacular and poorly understood phenomena is, indeed, the BP temperature-induced band-gap opening: when temperature is increased the fundamental band-gap increases instead of decreasing.This anomalous thermal dependence has also been observed, recently, in its monolayer counterpart. In this work, based on ab-initio calculations, we present an explanation

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“…Semiconducting black phosphorus (BP) is a layered material [1] with considerable current interest, due to its potential application for optoelectronic [2] and thermoelectric devices [3,4]. Recent success in growing two-dimensional, hexagonal "postgraphene" systems [5], including BP monolayers (so-called phosphorene) [6,7], has also intensified the interest in understanding its electronic structure [8,9] and transport properties [10].…”

Section: Introductionmentioning

confidence: 99%

Electronic structure and thermoelectric transport of black phosphorus

2017

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We investigate anisotropic electronic structure and thermal transport properties of bulk black phosphorus (BP). Using density functional dynamical mean-field theory we first derive a correlation-induced electronic reconstruction, showing band-selective Kondoesque physics in this elemental p-band material. The resulting correlated picture is expected to shed light onto the temperature and doping dependent evolution of resistivity, Seebeck coefficient, and thermal conductivity, as seen in experiments on bulk single crystal BP. Therein, large anisotropic particle-hole excitations are key to consistently understand thermoelectric transport responses of pure and doped BP.

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Semiconducting black phosphorus

Cited by 558 publications

References 34 publications

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics

Anomalous Temperature Dependence of the Band Gap in Black Phosphorus

Electronic structure and thermoelectric transport of black phosphorus

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