2019
DOI: 10.1016/j.solener.2019.02.003
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Semi-transparent photovoltaics using ultra-thin Cu(In,Ga)Se2 absorber layers prepared by single-stage co-evaporation

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Cited by 37 publications
(21 citation statements)
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“…[ 2,3 ] Among the various PV applications, flexible semi‐transparent ultra‐thin (F‐STUT) Cu(In 1− x ,Ga x )Se 2 (CIGSe) solar cells have boundless potential owing to their flexibility, customizability, and adaptability, which simultaneously allow daylighting and power generation. F‐STUT CIGSe solar cells should employ transparent conducting oxide (TCO) back‐contacts (BCs) instead of conventional Mo BCs for transparent applications [ 4–7 ] as well as bifacial PVs, [ 8 ] and their flexibility should be applicable to both flat and round surfaces. Considering the cost of CIGSe solar cells, researchers have attempted to reduce the absorber thickness (≤1 µm) and processing time.…”
Section: Introductionmentioning
confidence: 99%
“…[ 2,3 ] Among the various PV applications, flexible semi‐transparent ultra‐thin (F‐STUT) Cu(In 1− x ,Ga x )Se 2 (CIGSe) solar cells have boundless potential owing to their flexibility, customizability, and adaptability, which simultaneously allow daylighting and power generation. F‐STUT CIGSe solar cells should employ transparent conducting oxide (TCO) back‐contacts (BCs) instead of conventional Mo BCs for transparent applications [ 4–7 ] as well as bifacial PVs, [ 8 ] and their flexibility should be applicable to both flat and round surfaces. Considering the cost of CIGSe solar cells, researchers have attempted to reduce the absorber thickness (≤1 µm) and processing time.…”
Section: Introductionmentioning
confidence: 99%
“…In addition, Ag has also been described to aid in reducing planar defects, Cu vacancies, Cu Zn antisite defects, and reducing nonradiative bulk recombination. [ 29–35 ]…”
Section: Resultsmentioning
confidence: 99%
“…Research on ways to improve grain morphology at this thickness range is still at the early stage; options include using alternate transparent substrates (e.g. FTO), higher deposition temperature keeping the stoichiometry the same (and without creating additional vacancy 12 ) and adopting other physical deposition methods such as sputtering. In this section, we predict the output parameters J sc , V oc , R sh and R s for various scenarios of bulk and interface recombinations applied to varying CIGS thickness and gallium mole fraction.…”
Section: Practical Limits To Efficiencymentioning
confidence: 99%
“…For a A CIGS = 1 cm 2 CIGS cell, this gives A sh = 10 −6 cm 2 , typically found in CIGS solar cells 43 . The small effective shunt area can be justified with very localized, mi- 3,11,12,[46][47][48][49][50][51][52][53][54] (reference order: thickness low to high) and model fit with Eq. 18.…”
Section: B Limits To Open-circuit Voltagementioning
confidence: 99%
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