Semi-Insulating Polycrystalline-Silicon (SIPOS) Films Applied to MOS Integrated Circuits

Mochizuki, Hidenobu; Aoki, T.; Yamoto, Hisayoshi; Okayama, M.; Abe, M.; Ando, Tetsuo

doi:10.7567/jjaps.15s1.41

Cited by 48 publications

(9 citation statements)

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“…The tunnel SiO x /doped poly‐Si was investigated in bipolar transistor technology in the 1970s . The pioneer applications in PV started around 1980 and passivating contacts were commercialized in 2009 by SunPower Corp .…”

Section: Introductionmentioning

confidence: 99%

Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W

Chen¹,

Chen²,

Liu³

et al. 2019

Progress in Photovoltaics

148

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We present an industrial tunnel oxide passivated contacts (i‐TOPCon) bifacial crystalline silicon (c‐Si) solar cell based on large‐area n‐type substrate. The interfacial thin SiO2 is thermally growth and in situ capped by an intrinsic poly‐Si layer deposited by low‐pressure chemical vapor deposition (LPCVD). The intrinsic poly‐Si layer is doped in an industrial POCl3 diffusion furnace to form the n+ poly‐Si at the rear, which shows an excellent surface passivation characteristics with J0 = 2.6 fA/cm2 when passivated by a SiNx:H layer deposited by plasma‐enhanced chemical vapor deposition (PECVD). With an industrial fabrication process, the cells are manufactured with screen‐printed front and rear metallization, using large‐area 6‐in. n‐type Czochralski (Cz) Si wafers. We demonstrate an average front‐side efficiency greater than 23% and an open‐circuit voltage Voc greater than 700 mV. These results are based on more than 20 000 pieces of cells from mass production on a single day, in an old conventional multicrystalline silicon (mc‐Si) Al‐back surface field (BSF) cell workshop, which has been upgraded to i‐TOPCon process. The best cell efficiency reaches 23.57%, as independently confirmed by Fraunhofer CalLab. A median module power greater than 345 W and a best module power greater than 355 W are demonstrated with double‐glass bifacial i‐TOPCon modules consisting of 120 pieces of half‐cut 161.7 mm pseudosquare i‐TOPCon cells with nine busbars.

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Section: Introductionmentioning

confidence: 99%

Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W

Chen¹,

Chen²,

Liu³

et al. 2019

Progress in Photovoltaics

148

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“…Much interest has been directed towards chemical vapor deposited silicon oxide films, obtained from Sill4 and N20 gases, which can be used for passivation (1)(2), nonvolatile memory devices (3), and heterojunction transistors (4). Such films are commonly referred to by the acronym SIPOS (semi-insulating polycrystalline silicon), or silicon-rich silicon dioxide.…”

mentioning

confidence: 99%

Infrared, Raman, and X‐Ray Diffraction Studies of Silicon Oxide Films Formed from SiH4 and N 2 O Chemical Vapor Deposition

Nakamura

Mochizuki

Usami

et al. 1985

J. Electrochem. Soc.

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Infrared, Raman, and x-ray diffraction measurements were used to study films obtained by chemical vapor deposition from Sill4 and N~O gases. A wide range of N~O/SiH4 ratios (~) were used to examine the existing phases inside the film, oxidation states of the oxide phases, and crystallite growth of the silicon phase on subsequent heat-treatment. The as-deposited films were composed of an amorphous genuine silicon phase and an oxide phase SiO~, with x values from 1.38 to 1.63 for -y from 0.5 to 24. Reconstruction of both phases occurred by subsequent heat-treatment in N2 atmosphere. The sizes of the silicon crystallites formed in the silicon phase by subsequent heat-treatment were related to oxygen content of the film. Comparing reported electric and optical properties with results obtained in this study, we proposed a new model of the films, in which the silicon and oxide phases formed a complicated three-dimensional network. The model consistently explained all the observed film properties.

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“…Oxygen-doped polycrystalline silicon layers produced by chemical vapor deposition (CVD) are currently being used for a variety of silicon-devicepassivation applications (1,2). Such layers are commonly referred to by the acronym SIPOS (semi-insulating polycrystalline silicon).…”

mentioning

confidence: 99%

AES and XPS Studies of Semi‐Insulating Polycrystalline Silicon (SIPOS) Layers

Thomas

Goodman

1979

J. Electrochem. Soc.

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Quantitative Auger electron spectroscopy (AES) and x-ray photoelectron spectroscopy (XPS) have been used to characterize semi-insulating polycrystalline silicon (SIPOS) layers grown from a mixture of Sill4 and N20 by chemical vapor deposition. Various values of ,y (volumetric ratio of N20 to Sill4 in the deposition gas stream) were used to produce layers with a wide range of oxygen content. Oxygen concentration values determined by AES and XPS as a function of 7 were found to be in reasonable agreement with values determined by electron probe microanalysis. Analyses of the Si 2p binding energy spectra indicate the presence of elemental silicon as well as silicon oxides, predominantly Si20 and Si203. Ion sputtering of the SIPOS layers was shown to modify the surface composition from that of the unsputtered surface.

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Semi-Insulating Polycrystalline-Silicon (SIPOS) Films Applied to MOS Integrated Circuits

Cited by 48 publications

References 0 publications

Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W

Mass production of industrial tunnel oxide passivated contacts (i‐TOPCon) silicon solar cells with average efficiency over 23% and modules over 345 W

Infrared, Raman, and X‐Ray Diffraction Studies of Silicon Oxide Films Formed from SiH4 and N 2 O Chemical Vapor Deposition

AES and XPS Studies of Semi‐Insulating Polycrystalline Silicon (SIPOS) Layers

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