Semi-insulating GaP as a material for manufacturing photoconductive semiconductor switches

Suproniuk, Marek; Kamiński, P.; Kozłowski, Roman; Teodorczyk, M.; Mirowska, A.; Majda-Zdancewicz, Ewelina; Wierzbowski, M.; Piwowarski, Karol; Paziewski, Piotr

doi:10.1117/12.2524108

Cited by 2 publications

(2 citation statements)

References 12 publications

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“…The conducted research is a continuation of the research described in Ref. 15. A test switch made of SI GaP single crystals (SI GaP) constructed in lateral geometry and presented in Fig.…”

Section: Switch Sample Descriptionmentioning

confidence: 95%

Opto-Electronics Review

Piwowarski

2020

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Currently, work is underway to manufacture and find potential applications for a photoconductive semiconductor switch made of a semi-insulating material. The article analyzes the literature in terms of parameters and possibilities of using PCSS switches, as well as currently used switches in power and pulse power electronic system. The results of laboratory tests for the prototype model of the GaP-based switch were presented and compared with the PCSS switch parameters from the literature. The operating principle, parameters and application of IGBT transistor, thyristor, opto-thyristor, spark gap and power switch were presented and discussed. An analysis of the possibilities of replacing selected elements by the PCSS switch was carried out, taking into account the pros and cons of the compared devices. The possibility of using the currently made PCSS switch from gallium phosphide was also discussed.

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“…The conducted research is a continuation of the research described in Ref. 15. A test switch made of SI GaP single crystals (SI GaP) constructed in lateral geometry and presented in Fig.…”

Section: Switch Sample Descriptionmentioning

confidence: 95%

Opto-Electronics Review

Piwowarski

2020

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“…The measurements carried out are a continuation of the research described in [11]. In the blocking state, the METREL MI 3210 TeraOhm XA meter was used to measure switch parameters.…”

Section: Dark Current Measurementsmentioning

confidence: 99%

Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP

Piwowarski¹,

Suproniuk²,

Kamiński³

et al. 2020

Radioelectronic Systems Conference 2019

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The article presents the experimental results of research works aimed at manufacturing photoconductive semiconductor switches (PCSSs) on semi-insulating (SI) gallium phosphide (GaP) wafers. The PCSS is an electrical switch, triggered into the conduction state by means of an optical pulse with specific photon energy. The switches presented in the paper are developed for the applications in power systems and high-pulse voltage generators. The paper presents time courses of the photocurrent being a response to the excitation of semiconductor material with an optical pulse that generates excess charge carriers. The effects of laser beam photon energy on the height and time constant of photocurrent pulses were determined. The results of measurements of photocurrent in the conduction state for various values of electric field strength are presented. The research methodology was discussed and the measuring system used was described. Possible directions of further research were also presented. The research was carried out thanks to the cooperation of scientific teams from the

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Semi-insulating GaP as a material for manufacturing photoconductive semiconductor switches

Cited by 2 publications

References 12 publications

Opto-Electronics Review

Opto-Electronics Review

Influence of photon energy on conductivity of photoconductive semiconductor switches fabricated from semi-insulating GaP

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