Semi-Empirical Model for SEGR Prediction

Javanainen, Arto; Ferlet-Cavrois, V.; Jaatinen, Jukka; Kettunen, H.; Muschitiello, M.; Pintacuda, Francesco; Rossi, Mikko; Schwank, J.R.; Shaneyfelt, M.R.; Virtanen, A.

doi:10.1109/tns.2012.2236105

Cited by 8 publications

(11 citation statements)

References 10 publications

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“…The qualitative model proposed here is in conjunction with the model proposed in Ref. [4]. Also similarities can be observed between simulation results presented here and the data presented in Ref.…”

Section: Introductionsupporting

confidence: 84%

“…Experimental breakdown voltages for xenon-ion-induced SEGR are shown to follow the model proposed in Ref. [4], when the intrinsic breakdown fields and the thicknesses of the corresponding dielectrics in the stack are introduced in the equations.…”

Section: Introductionmentioning

confidence: 83%

“…A model for predicting SEGR in SiO 2 -based MOS-devices has been proposed in Ref. [4]. By using this model we can write the estimation for the dielectric breakdown voltage as a function of dielectric thickness, t d , as follows…”

Section: Semi-empirical Modelmentioning

confidence: 99%

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SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

Javanainen

Ferlet-Cavrois

Bosser

et al. 2014

IEEE Trans. Nucl. Sci.

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This work presents experimental Single Event Gate Rupture (SEGR) data for Metal-Insulator-Semiconductor (MIS) devices, where the gate dielectrics are made of stacked SiO2-Si3N4 structures. A semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is first proposed. Then interrelationship between SEGR crosssection and heavy-ion induced energy deposition probability in thin dielectric layers is discussed. Qualitative connection between the energy deposition in the dielectric and the SEGR is proposed.

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Section: Introductionsupporting

confidence: 84%

Section: Introductionmentioning

confidence: 83%

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SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

Javanainen

Ferlet-Cavrois

Bosser

et al. 2014

IEEE Trans. Nucl. Sci.

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“…During a heavy ion strike, the dielectric strength is temporarily reduced. Models with more physical insight were proposed by Javanainen et al [17], although a simple empirical expression with little physical justification is adopted in this work, as follows [16]:…”

Section: Oxide Thicknessmentioning

confidence: 99%

Optimization of the Cell Structure for Radiation-Hardened Power MOSFETs

Wang

Wan

Hu³

et al. 2019

Electronics

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Power MOSFETs specially designed for space power systems are expected to simultaneously meet the requirements of electrical performance and radiation hardness. Radiation-hardened (rad-hard) power MOSFET design can be achieved via cell structure optimization. This paper conducts an investigation of the cell geometrical parameters with major impacts on radiation hardness, and a rad-hard power MOSFET is designed and fabricated. The experimental results validate the devices' total ionizing dose (TID) and single event effects (SEE) hardness to suitably satisfy most space power system requirements while maintaining acceptable electrical performance.

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“…Also, based on formal analysis of variety of experimental data Javanainen et al [ 6 ] proposed a SEGR prediction method based on statistical variations in the energy deposition. There are several analytic approximations for description of distribution of energy loss under straggling.…”

Section: Distribution Of Energy-loss Stragglingmentioning

confidence: 99%

Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

et al. 2014

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Destructive single event gate rupture (SEGR) occurring in the gate oxides of power MOSFETs under impact of heavy ions is studied and modeled. SEGR cross section of power MOSFET with 70 nm oxide thickness as function of gate voltage was measured for four types of heavy ions. A predictive formula for the SEGR cross section is derived and validated. This formula can be used as a predictive instrument for computation of survival probability in a given spectrum of heavy ions in space environments.

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Semi-Empirical Model for SEGR Prediction

Cited by 8 publications

References 10 publications

SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

Optimization of the Cell Structure for Radiation-Hardened Power MOSFETs

Modeling of single event gate rupture in power MOSFETs under heavy ion irradiation

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