Semi‐Empirical Calculation of Depletion Region Width in n+‐p Silicon Solar Cells

Wang, E. Y.; Legge, R. N.

doi:10.1149/1.2134066

Cited by 3 publications

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“…The measured conductivity ~ and Hall coefficient RH are related to the x dependent conductivity a and Hall coefficient RH as follows 1 1 I t = ~ = --~(x) dx [1] p t s t d(X) RH(X) dx RH -~ [2] where the HaU factor has been taken as unity. For one carrier system, we can simplify Eq.…”

Section: Impurity Profile By Differential Hall and Resistivity Measurmentioning

confidence: 99%

“…The measured short-circuit is in good agreement with the calculated values. The capacitance-voltage (C-V) method is widely used to measure dopant density vs. depth profiles of semiconductor specimens (1)(2)(3)(4). Equations have been developed to correct for the peripheral capacitance (5)(6)(7)(8) and for back-depletion into the diffused layer (8) for the case of Gaussian diffused planar p-n junctions, and the consequences of neglecting these corrections have been illustrated (8)(9)(10).…”

Section: Fig 5 Short-circuit Current Vs Wavelengthsmentioning

confidence: 99%

“…In recent calculations of the short-circuit current for silicon solar cells (1), we have found that this current is sensitive not only to the junction depth and the depletion region width (2) but also to the impurity distribution in the diffused and base regions. In order to verify these theoretical results, we have experimentally investigated the impurity profile and sheet resistance of the diffused layers of n+-p silicon solar cells fabricated by normal diffusion processes with various lengths of drive-in times.…”

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confidence: 94%

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Effects of Impurity Redistribution on the Short‐Circuit Current of n+‐p Silicon Solar Cells

Wang¹,

Hsu²,

Brandhorst³

1977

J. Electrochem. Soc.

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The effect of impurity redistribution on the n+-diffused layer of silicon solar cells has been studied. The impurity concentration was profiled by fourpoint-probe differential Hall and resistivity measurements. The electric field gradient and the mobility gradient in the diffused region were obtained from the impurity profiles. Short-circuit current was calculated from the effective recombination lifetime deduced from electric field gradient and mobility gradient results. The calculated short-circuit current was compared with measured values as a function of wavelengths and found to he in reasonably good agreement.In recent calculations of the short-circuit current for silicon solar cells (1), we have found that this current is sensitive not only to the junction depth and the depletion region width (2) but also to the impurity distribution in the diffused and base regions. In order to verify these theoretical results, we have experimentally investigated the impurity profile and sheet resistance of the diffused layers of n+-p silicon solar cells fabricated by normal diffusion processes with various lengths of drive-in times. We have also measured the short-circuit current on these "identical" solar cells. Experimental results obtained on these cells are in good agreement with the theoretical calculations.Fifteen cells were fabricated from the (111) orientation of 10 ~2-cm p-type silicon. The chemically etched material was diffused in POC13 at 850~ for 30 rain, the normal diffusion process for conventional n on p silicon solar ceils at NASA-Lewis Center. The drive-in process at 850~ was performed for different lengths of time with nitrogen present as the carrier gas. After the diffusion and drive-in processes, cells were coated with Apiezen in the front; the back and edges of cells were etched away in a 2:3:1 (HNO3:acetic:HF) solution for 1 rain. The cells were then chemically treated in concentrated HF solution for 3 min, and subsequently went through the normal cleaning process for contact metallization (A1 and Ag). For better ohmic contacts cells were sintered at 600~ for 20 rain. At least three identical "cells" were made for the impurity profile and for the short-circuit current studies.

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Section: Impurity Profile By Differential Hall and Resistivity Measurmentioning

confidence: 99%