Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach

Pilotto, A.; Khakbaz, Pedram; Palestri, Pierpaolo; Esseni, D.

doi:10.1016/j.sse.2022.108295

Cited by 8 publications

(6 citation statements)

References 33 publications

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“…Various theoretical and experimental studies have investigated the effects of phonon scattering and strain on MoS 2 FET. Tiwari et al [ 22 ] found that the impact of optical phonons decreases as temperature increases, with a current variation of about 6.7% and between 300 K and 400 K. Pilotto et al [ 23 ] demonstrated that optical phonons have a significant effect on the current. In addition, Guo et al [ 24 ] showed that scattering is significant at higher temperatures.…”

Section: Introductionmentioning

confidence: 99%

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

et al. 2023

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Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which make it a highly prospective material for use as a channel in upcoming nanoelectronic devices. An analytical modeling framework was used to investigate the I–V characteristics of field-effect transistors based on MoS2. The study begins by developing a ballistic current equation using a circuit model with two contacts. The transmission probability, which considers both the acoustic and optical mean free path, is then derived. Next, the effect of phonon scattering on the device was examined by including transmission probabilities into the ballistic current equation. According to the findings, the presence of phonon scattering caused a decrease of 43.7% in the ballistic current of the device at room temperature when L = 10 nm. The influence of phonon scattering became more prominent as the temperature increased. In addition, this study also considers the impact of strain on the device. It is reported that applying compressive strain could increase the phonon scattering current by 13.3% at L = 10 nm at room temperature, as evaluated in terms of the electrons’ effective masses. However, the phonon scattering current decreased by 13.3% under the same condition due to the existence of tensile strain. Moreover, incorporating a high-k dielectric to mitigate the impact of scattering resulted in an even greater improvement in device performance. Specifically, at L = 6 nm, the ballistic current was surpassed by 58.4%. Furthermore, the study achieved SS = 68.2 mV/dec using Al2O3 and an on–off ratio of 7.75 × 104 using HfO2. Finally, the analytical results were validated with previous works, showing comparable agreement with the existing literature.

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Section: Introductionmentioning

confidence: 99%

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

et al. 2023

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“…The values of the effective masses are gathered in table 1. This analytical description for the bands has shown a good agreement with full-band models in Monte Carlo simulations for TMDs, and being more efficient from the computational point of view [25].…”

Section: Emc Modelmentioning

confidence: 68%

“…Yet, a detailed study of the interplay of screening and temperature on the different scattering mechanisms is lacking. A recently presented Monte Carlo study of mobility in MoS 2 has considered scattering with Coulomb centres (the ionised impurity scattering), neutral defects, and surface optical phonons, in addition to the electron scattering with intrinsic phonons [25]. However, static screening was only partially considered for Coulomb centres and neutral defects.…”

Section: Introductionmentioning

confidence: 99%

Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening

Iglesias¹,

Nardone²,

Rengel³

et al. 2023

2D Mater.

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The effect of degeneracy and the impact of free-carrier screening on a low-field mobility and a high-field drift velocity in MoS2 and WS2 are explored using an in-house ensemble Monte Carlo simulator. Electron low field mobility increases to 8400 cm2/Vs for MoS2 and to 12040 cm2/Vs for WS2 when temperature decreases to 77 K and carrier concentration is around 5cdot10^12cm^-2. In the case of holes, best mobility values were 9320 cm2/Vs and 13290 cm2/Vs, reached at 77 K, while at room temperature these fall to 80 cm2/Vs and 150 cm2/Vs for MoS2 and WS2, respectively. The carrier screening effect plays a major role at low fields, and low and intermediate temperatures, where a combination of large occupancy of primary valleys and carrier-phonon interactions dominated by relatively low energy exchange processes results in an enhanced screening of intrinsic scattering. For electrons, degeneracy yields to transport in secondary valleys, which plays an important role in the decrease of the low field mobility at high concentrations and/or at room temperature. The high-field drift velocity is not much affected by carrier screening because of an increased carrier scattering with surface optical polar phonons, favouring larger phonon wavevector interactions with small dielectric function values.

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“…Alternatively, new insulating materials could be introduced in the CMOS flow, but this may further complicate the fabrication, adding more time and cost. The fact that it is not clear which insulator and 2D material combination would make the most feasible integration is an additional concern, since it has become abundantly clear that the choice of insulator plays a very important role in the electrical properties of the 2D film due to the introduction of surface optical phonon scattering, which becomes the dominant scattering effect, limiting the film’s conductivity [ 126 ]. It is therefore not clear what impact the rougher PECVD surface will have on the electrical and sensing properties of the chemiresistive film.…”

Section: Semiconductor-based Gas Sensor Typesmentioning

confidence: 99%

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

Filipovic

Selberherr

2022

Nanomaterials

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During the last few decades, the microelectronics industry has actively been investigating the potential for the functional integration of semiconductor-based devices beyond digital logic and memory, which includes RF and analog circuits, biochips, and sensors, on the same chip. In the case of gas sensor integration, it is necessary that future devices can be manufactured using a fabrication technology which is also compatible with the processes applied to digital logic transistors. This will likely involve adopting the mature complementary metal oxide semiconductor (CMOS) fabrication technique or a technique which is compatible with CMOS due to the inherent low costs, scalability, and potential for mass production that this technology provides. While chemiresistive semiconductor metal oxide (SMO) gas sensors have been the principal semiconductor-based gas sensor technology investigated in the past, resulting in their eventual commercialization, they need high-temperature operation to provide sufficient energies for the surface chemical reactions essential for the molecular detection of gases in the ambient. Therefore, the integration of a microheater in a MEMS structure is a requirement, which can be quite complex. This is, therefore, undesirable and room temperature, or at least near-room temperature, solutions are readily being investigated and sought after. Room-temperature SMO operation has been achieved using UV illumination, but this further complicates CMOS integration. Recent studies suggest that two-dimensional (2D) materials may offer a solution to this problem since they have a high likelihood for integration with sophisticated CMOS fabrication while also providing a high sensitivity towards a plethora of gases of interest, even at room temperature. This review discusses many types of promising 2D materials which show high potential for integration as channel materials for digital logic field effect transistors (FETs) as well as chemiresistive and FET-based sensing films, due to the presence of a sufficiently wide band gap. This excludes graphene from this review, while recent achievements in gas sensing with graphene oxide, reduced graphene oxide, transition metal dichalcogenides (TMDs), phosphorene, and MXenes are examined.

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Semi-classical transport in MoS2 and MoS2 transistors by a Monte Carlo approach

Cited by 8 publications

References 33 publications

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

Modeling the Impact of Phonon Scattering with Strain Effects on the Electrical Properties of MoS2 Field-Effect Transistors

Carrier mobility and high-field velocity in 2D transition metal dichalcogenides: degeneracy and screening

Application of Two-Dimensional Materials towards CMOS-Integrated Gas Sensors

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