Semi‐analytical small signal parameter extraction method for PIN photodiode

Xu, Zhixia; Gao, Jianjun

doi:10.1049/iet-opt.2016.0051

Cited by 8 publications

(6 citation statements)

References 13 publications

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“…Many different models have been proposed to simulate the behavior of p-i-n type photodiodes, with varying degrees of complexity. The standard approach is to model the photodiode with SPICE electrical circuit composed of current source and passive RLC elements [18][19][20].…”

Section: Theoretical Modelmentioning

confidence: 99%

Precise characterisation of AM-to-PM phenomena in fast Si photodiodes

Budzyn,

Baranski

2024

Preprint

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The influence of bias on the phase shift of optical signal conversion in a silicon p-i-n photodiode was precisely measured. We have found that the dependence is qualitatively quite similar to characteristics of electrons and holes velocity previously reported in the literature. The reported effect together with the influence of modulation depth on phase shift (AM-to-PM conversion) has a negative impact on optical signal reception at high frequency. We show that it is possible to find optimal bias voltage and light intensity to reduce electrical phase noise of the photodetector.

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Section: Theoretical Modelmentioning

confidence: 99%

Precise characterisation of AM-to-PM phenomena in fast Si photodiodes

Budzyn,

Baranski

2024

Preprint

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“…This is achieved through the simulation where a PD is connected to a TML that is based on the Pi-model of Fig. 6 [83]. The DS TML is calculated for an ascending value of the asymmetry factor a.…”

Section: Evaluating the Asymmetry Assumption For The Tmlmentioning

confidence: 99%

“…The first figure of merit that is tested is the effect of the asymmetry on the and parameters of the TML. Therefore, is introduced comparing the magnitude of the reflection coefficient to [83]. The is calculated for an ascending value of the asymmetry factor .…”

Section: Evaluating the Asymmetry Assumption For The Tmlmentioning

confidence: 99%

Investigation of de-embedding techniques applied on uni-traveling carrier photodiodes

Konstantinou

Caillaud

Rommel

et al. 2021

Int. J. Microw. Wireless Technol.

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The generation and transmission of millimeter-wave signals for 5G applications require the use of broadband and high output power photodetectors to bridge from the optical and electronic domains. Therefore, the deep knowledge on the equivalent circuit characteristics of these devices is vital. This study reviews and analyzes de-embedding techniques contributing to the characterization of the physical aspects within the active region of uni-traveling carrier photodiodes. De-embedding methods analytically remove the parasitic effects of the electrical transmission lines connected to their active area allowing the extraction of their series resistance and junction capacitance toward the synthesis of an equivalent circuit with lumped elements. The open-short technique is examined and a systematic error introduced by this process underlines the vulnerability of the method on removing parasitics with higher complexity. This error is quantified leading to the implementation of a corrected equation converging with the characteristic features of an $S$ -parameter-based de-embedding. These characteristics are also analyzed through simulation approaches showing minimal equivalent inaccuracies on eliminating more complex symmetrical parasitics. A thorough comparison between these three methods is conducted through the calculation of lumped components corresponding to the active region of diodes with different sizes.

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“…One example of such optoelectronic structure is the PIN photodiode of Fig. 7.3b that consists of three different types of semiconductor materials: an intrinsic region that acts as the carrier generation layer once the absorbed photons have energy (E = hf ) higher than its bandgap, a P-type semiconductor collecting the generated holes, and an N-type material attracting the electrons [9]. If an adequate reverse bias (V bias ) is applied, the intrinsic region becomes fully depleted, and a strong electric field is established across the junction accumulating the photogenerated carriers that drift toward the contacts of the device inducing a photocurrent (I ph ) at its load (R L ).…”

Section: Physical Properties Of Photodiodesmentioning

confidence: 99%

Integrated Optical-Wireless Interface and Detection

Konstantinou

Xue

Shivan

et al. 2021

Enabling 6G Mobile Networks

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show abstract

Semi‐analytical small signal parameter extraction method for PIN photodiode

Cited by 8 publications

References 13 publications

Precise characterisation of AM-to-PM phenomena in fast Si photodiodes

Precise characterisation of AM-to-PM phenomena in fast Si photodiodes

Investigation of de-embedding techniques applied on uni-traveling carrier photodiodes

Integrated Optical-Wireless Interface and Detection

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