Self-Stacked Growth of Cu₉S₅ Nanostructures with Morphology Regulation as an Electromagnetic Wave Absorber

Abstract

The development of thin semiconductor nanomaterial sulfide absorbers with strong absorption and a wide bandwidth can effectively expand the application of sulfide in the field of electromagnetic wave absorption. Structural analysis of the crystallographic information, epitaxial elemental information, microscopic morphological structure information, electromagnetic wave parameter information, and radar scattering cross-sectional area characteristics of Cu 9 S 5 demonstrated that the morphological regulation strategy applied to Cu 9 S 5 nanomaterials achieved the expected results. The crystalline shape of the nanomaterial was pure. The prepared Cu 9 S 5 nanomaterial had multiple electromagnetic wave loss mechanisms. Among them, the minimum reflection loss of the polyhedral Cu 9 S 5 nanomaterial was −60.77 dB at 1.78 mm, and the effective absorption bandwidth of the porous sheet Cu 9 S 5 nanomaterial reached 5.2 GHz at 1.9 mm. This work provided a strategy for the application of semiconductor Cu 9 S 5 functional nanomaterials in the field of electromagnetic wave absorption and can serve as a basis for subsequent in-depth studies on semiconductor metal sulfides. Nanostructured Cu 9 S 5 has excellent research prospects in the field of microwave absorption.