Self-powered white light photodetector with enhanced photoresponse using camphor sulphonic acid treated CsPbBr3 perovskite in carbon matrix

Unlocking High-Performance, Ultra-Low Power van der Waals Photo-Transistors: Toward Back-End-of-Line in-Sensor Machine Vision Applications

“…The performance of our device supersedes that of reported photovoltaic devices when operating under photovoltaic mode, as shown in the benchmark plot in Figure a. Here, the device performance (responsivity vs V gs ) is plotted from reports utilizing gate-tunable photovoltaic devices for MV. ,,,,− , The highest responsivity reported to date ranges between 0.05 and 0.06 A/W. These reports utilize a specific wavelength detection while white light MV photovoltaic devices show responsivities that range between 0.009 and 0.0137 A/W.…”

“…Here, the device performance (responsivity vs V gs ) is plotted from reports utilizing gate-tunable photovoltaic devices for MV. 6,26,28,34,[36][37][38]43 The highest responsivity reported to date ranges between 0.05 and 0.06 A/W. These reports utilize a specific wavelength detection while white light MV photovoltaic devices show responsivities that range between 0.009 and 0.0137 A/W.…”

“…To date, no photodetector devices used for in/near-sensor computing can meet all of these stringent requirements. In fact, most published reports use methods and techniques that are either hard to scale up or are CMOS incompatible. , These methods include the use of electron beam lithography, nonconventional substrates, or expensive fabrication processes. − Moreover, all reports show devices with noticeable power dissipation, which can affect the total performance. ,,− Some reports show photodetectors with low responsivity or low gate tunability. − However, other reports require double gate configuration structures (i.e., split gate) to obtain tunable responsivity. ,− Additionally, most reports on photodetectors utilized for in/near-sensor computing are aimed at specific wavelength detection and not the entire visible range.…”

Multifunctional Regioisomeric Passivation Strategy for Fabricating Self-Driving, High Detectivity All-Inorganic Perovskite Photodetectors

“…2,7−9,14−18 To address this issue, the passivation strategies of employing organic Lewis bases which contain lone pair electrons, such as hydroxyl, amino, and carboxyl groups, have been proven effective for mitigating detrimental defects and enhancing the performance of perovskite optoelectronic devices. [2][3][4]8,9,[14][15][16]19,20 These approaches involve the interaction between Pb 2+ or I − ions and the Lewis bases, passivating the prevalent defects by neutralizing positive or negative charges, and eliminating electron defect states. Recently, fluorinated aromatic multifunctional Lewis base passivators were developed to restrain the grain boundary defects in perovskite films and to enhance the performance of perovskite optoelectronic devices.…”

“…As is well-known, despite the higher defect tolerance compared to other traditional photosensitive materials, perovskite polycrystalline thin films still contain a significant number of surface and interface defects, such as vacancies, interstitial, and antisite defects, which can still limit the device performance. − ,− ,− Among these defects, the noncoordinated X – and B 2+ ions (X – vacancies) are the dominant nonradiative recombination centers and serve as the starting points for ion migration and dissociation processes. ,− ,− To address this issue, the passivation strategies of employing organic Lewis bases which contain lone pair electrons, such as hydroxyl, amino, and carboxyl groups, have been proven effective for mitigating detrimental defects and enhancing the performance of perovskite optoelectronic devices. − ,,,− ,, These approaches involve the interaction between Pb 2+ or I – ions and the Lewis bases, passivating the prevalent defects by neutralizing positive or negative charges, and eliminating electron defect states. Recently, fluorinated aromatic multifunctional Lewis base passivators were developed to restrain the grain boundary defects in perovskite films and to enhance the performance of perovskite optoelectronic devices. , These passivators exhibit peculiarly strong covalent bonds and excellent hydrophobic stability, which endow them with the powerful ability to neutralize the effects of grain boundaries in perovskite films. − The Fu and Yang groups, respectively, utilized 4-fluorophenethylammonium iodide and 2-amino- N -(2,4-difluorophenyl) acetamide to modify the crystallization process of perovskite and achieve passivation.…”