Self-powered ultraviolet photovoltaic photodetector based on graphene/ZnO heterostructure

Zinc oxide heterostructures: advances in devices from self-powered photodetectors to self-charging supercapacitors

“…A Schottky junction based self-powered UV PD was reported by Chen et al with Gr and modified ZnO. 91 Ideally, in accordance with the Mott-Schottky theory, undoped Gr (work function of 4.6 eV) and undoped ZnO (work function of 4.4 eV) form a Schottky barrier upon contact. 92 However, many existing reports show that in a practical scenario the contact is rather an ohmic or quasi-ohmic.…”

“…93,94 Occurrence of this non-ideal behaviour arises from the surface defect states in the ZnO and thereby resulting in pinning of the E f . 91 I-V characteristics (both under dark and UV) depicted a quasi-ohmic behaviour for Gr/ZnO (Fig. 8(b)), ZnO/AZO and Gr/Ag contact devices (inset of (Fig.…”

“…8(d) presents a cyclic response with contributions from both the built-in electric field as well the pyroelectric potential (the sharp peaks), the so called pyrophototronic effect, an effect arising from light induced rapid temperature increase of ZnO. 91,96 A R i of 50 µAW -1 with response (t r ) of recovery times (t f ) each of 32 ms was obtained for the self-powered PD. 91 Page 19 of 80 Materials Advances…”

“…91,96 A R i of 50 µAW -1 with response (t r ) of recovery times (t f ) each of 32 ms was obtained for the self-powered PD. 91 Page 19 of 80 Materials Advances…”

Performance Improvement of Amorphous Ga2O3/P-Si Deep Ultraviolet Photodetector by Oxygen Plasma Treatment

“…Deep ultraviolet photodetectors (PDs), due to their good anti-interference property, have various applications in the fields of environmental monitoring, wireless secure communication, fire warning, and missile warning [1][2][3][4][5]. Deep ultraviolet PDs fabricated with wide band gap semiconductor materials such as diamond [6], AlGaN [7], AlN [8], and Ga 2 O 3 have attracted increasing attention because of their excellent anti-interference performance [9][10][11][12][13].…”