Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga<sub>2</sub>O<sub>3</sub> substrate*

Chu, Xuan; Liu, Zeng; Zhi, Yusong; Liu, Yuan-Yuan; Zhang, Shaohui; Wu, Chao; Gao, Ang; Li, Peigang; Guo, Daoyou; Wu, Zhenping; Tang, Weihua

doi:10.1088/1674-1056/abc546

Cited by 11 publications

(8 citation statements)

References 36 publications

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“…Extremely fast response time for the β -(Al 0.25 Ga 0.75 ) 2 O 3 passivated devices, 16.56 times faster than the β -Ga 2 O 3 devices. [15,31,32] To further evaluate the detection performance of each device in a comprehensive manner, Fig. 5(c) shows the responsivities R, detectivities D, and external quantum efficiency (EQE) of the Ga 2 O 3 and β -(Al 0.25 Ga 0.75 ) 2 O 3 /β -Ga 2 O 3 devices.…”

Section: Resultsmentioning

confidence: 99%

“…[5,6] Based on these, power devices based on β -Ga 2 O 3 are expected to have higher breakdown voltage and lower on-resistance, resulting in lower conduction losses and higher power conversion efficiency. [7] These characteristics ensure that β -Ga 2 O 3 is promising to applications in the field of power electronics devices. Furthermore, β -Ga 2 O 3 is an ideal candidate for solar-blind ultraviolet (UV) detection due to its wide band gap, large UV absorption coefficient, and easy processing, etc.…”

Section: Introductionmentioning

confidence: 99%

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Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

Yue¹,

Ji²,

Li³

et al. 2023

Chinese Phys. B

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The solar-blind ultraviolet(UV) photodetectors(PDs) with metal-semiconductor-metal(MSM) structure were fabricated based on β-(Al0.25Ga0.75)2O3/β-Ga2O3 film grown by metal-organic chemical vapor deposition(MOCVD).And yet,various surface states increase dark current and a large number of defects can hinder the transport of carriers, resulting in low switching ratio and low responsivity of the device. In this paper,β-(Al0.25Ga0.75)2O3 films are used as surface passivation materials, in addition owning to its wide band gap, excellent light transmission and high lattice matching with β-Ga2O3. We explored the change and mechanism of the detection performance of the β-Ga2O3 detector after β-(Al0.25Ga0.75)2O3 surface passivation. It was found that under the illumination with 254 nm light at 5 V bias, the β-(Al0.25Ga0.75)2O3/β-Ga2O3 PDs showed dark current is just 18 pA and high current on/off ratio is 2.16× 105,the dark current is sharply reduced about 50 times after passivation of the β-Ga2O3 surface, and current on/off ratio increased by approximately 2 times.The results show that β-Ga2O3 detectors with β-(Al0.25Ga0.75)2O3 surface passivation offer superior detector performance.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

Yue¹,

Ji²,

Li³

et al. 2023

Chinese Phys. B

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“…In a photodetector with a Schottky junction, it is beneficial to achieve a high photoresponse and fast photoresponse speed, compared to an MSM photodetector with a symmetrical barrier [80]. For a photodetector device with a barrier as shown in figure 3(b), the current transport can be described by a general theory, i.e.…”

Section: Advantages and Mechanismsmentioning

confidence: 99%

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

Liu¹,

Tang²

2023

J. Phys. D: Appl. Phys.

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Deep-ultraviolet (DUV) photodetectors are fundamental building blocks in lots of solid-state DUV optoelectronics, whose prosperity is pinned hope on continuous innovations on semiconductor materials and physics of device structures. Conquering the technological obstacles in narrow bandgap silicon-based optoelectronics (photodetectors and photonics), wide bandgap semiconductor gained a high level of enthusiasm in constructing DUV photodetector, thereinto Ga2O3 is a typical representative benefiting from its promising physical and chemical properties in nature, especially for its energy bandgap around 4.5-5.2 eV for its five phases (α, β, γ, ε and δ). Which just right provides a hard-won opportunity to respond to DUV light irradiation without the need for adjusting the component in compounds and/or adding external optical instruments, as some compound semiconductors AlxGa1-xN, MgxZn1-xO, etc. According to literature reports on Ga2O3-based photodetectors, the device morphology includes metal-semiconductor-metal (MSM) photodetector, homojunction or heterojunction photodetector, phototransistor, and Schottky photodiode. What calls for special attention is that Schottky photodiode with a rectified Schottky junction has certain advantages: easy fabrication, fast photoresponse, less high-temperature diffusion, low dark current, high detectivity, and self-powered operation; in spite of weaknesses of thin depletion layer and low barrier at metal-semiconductor (M-S) interface. Therefore, in this concise literature review article, the recent progresses on Ga2O3-based Schottky photodiodes is discussed in order to show some suggestions on choice of Schottky metal, interfacial barrier modulation, space electric field adjustment, energy band engineering, and photodetection performance improvement, for promoting the further developments of DUV photodetection in the near future.

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“…Gallium oxide (Ga 2 O 3 ) has become a popular material for the new generation of power electronics and optoelectronic devices, due to its ultra-wide bandgap (E g ) and high critical breakdown electric field (E BR ) [1][2][3], which can meet the development needs of high power and miniaturization. The bandgap of Ga 2 O 3 is as high as 4.4-5.0 eV [4][5][6], and the corresponding absorbance cut-off wavelength of shorter than 280 nm, which is exactly in the solar-blind ultraviolet region, therefore Ga 2 O 3 has been widely used for solar-blind UV photodetectors (PDs) [7][8][9]. Benefiting from the high immunity to * Authors to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Study on PECVD-hetero-grown β-Ga₂O₃ thin film and temperature-modulated solar-blind UV photodetection

Xi,

Yang,

Liu

et al. 2023

J. Phys. D: Appl. Phys.

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Using a convenient and low-cost plasma-enhanced chemical vapor deposition (PECVD) technique, uniform Ga2O3 thin films were hetero-grown on c-plane sapphire substrates at different temperatures, with root mean square (RMS) roughness as low as 2.71 nm and a growth rate of up to 1121.30 nm/h; and then the solar-blind UV photodetection performances were discussed in detail. Metal-semiconductor-metal (MSM) solar-blind UV photodetectors based on the five Ga2O3 films prepared at different temperatures exhibit ultra-low dark currents (Idark) ranging among 22-168 fA. Under the illumination of 254 nm UV light, the photodetector prepared by the film grown at 820 ℃ possesses the highest performance with a high photo-to-dark current ratio (PDCR) of 1.47×105, a low rise/fall time of 0.067/0.13 s, a specific detectivity (D*) of 3.56×1012 Jones, and a linear dynamic range (LDR) of 92.89 dB. In all, the results in this work may well provide a referable method for growing cost-effective and ultralow-noise Ga2O3 thin films; as well as achieving decent solar-blind UV sensing application.

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Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga₂O₃ substrate*

Cited by 11 publications

References 36 publications

Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

Study on PECVD-hetero-grown β-Ga₂O₃ thin film and temperature-modulated solar-blind UV photodetection

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Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga2O3 substrate*

Cited by 11 publications

References 36 publications

Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation

Dramatic reduction in dark current of β-Ga2O3 ultraviolet photodectors via β-(Al0.25Ga0.75)2O3 surface passivation

A review of Ga2O3 deep-ultraviolet metal–semiconductor Schottky photodiodes

Study on PECVD-hetero-grown β-Ga2O3 thin film and temperature-modulated solar-blind UV photodetection

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Product

Resources

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Self-powered solar-blind photodiodes based on EFG-grown (100)-dominant β-Ga₂O₃ substrate*

Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

Dramatic reduction in dark current of β-Ga₂O₃ ultraviolet photodectors via β-(Al_0.25Ga_0.75)₂O₃ surface passivation

A review of Ga₂O₃ deep-ultraviolet metal–semiconductor Schottky photodiodes

Study on PECVD-hetero-grown β-Ga₂O₃ thin film and temperature-modulated solar-blind UV photodetection