Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga₂O₃ Nanowires Array Film Schottky Junction

Abstract

Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications.

High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector

“…This value is comparable to what has been recently reported on self-powered Ga 2 O 3 nanowire based photodetectors50. Besides not requiring an external energy source for operation, photovoltaic mode operation in our case appears to have the additional advantage of generating a better signal-to-noise ratio and higher stability than when a nonzero bias is applied.…”

Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

“…It has been widely used as photocatalyst, solar-blind UV detectors, gas sensors, and short wavelength light emitting diodes34567. Besides, it is a promising candidate for power devices as higher Baliga’s figures of merit (over 3000) and higher breakdown field (8 MV/cm), a lower cost and more easily accessible properties compared with the conventional power semiconductors such as SiC and GaN891011.…”

Compositional and structural engineering of inorganic nanowires toward advanced properties and applications

“…Most β‐Ga 2 O 3 nanostructure‐based photodetectors are photoconductive with a relatively slow response speed due to the persistent photoconductivity effect . Hybrid structures, such as Au/Ga 2 O 3 , SiC/β‐Ga 2 O 3 film, and Ga 2 O 3 /SnO 2 core‐shell nanowires, display improved performance . Fang's group reported that ZnO‐Ga 2 O 3 core‐shell heterostructures were fabricated into a self‐powered solar‐blind photodetector (200‐280 nm), as illustrated by the energy band diagram (Figure A,B).…”