Self-Powered Programmable van der Waals Photodetectors with Nonvolatile Semifloating Gate

Activation of the Photosensitive Potential of 2D GaSe by Interfacial Engineering

“…These results can be ascribed to the robustness of both GaSe and MoSe 2 . Figure i presents the time-resolved photocurrent of the GaSe/MoSe 2 device at V ds = 2 V. The rise time (τ rise ) and fall time (τ fall ) are estimated as 112.4 and 426.8 μs, respectively, which is much faster than those of pure MoSe 2 device (Figure S13) and stands out among previously reported 2D photodetectors. − In principle, the τ rise is contingent upon the transport time of photocarriers, while the τ fall is mainly influenced by the recombination process of photocarriers. ,, Within the GaSe/MoSe 2 device, the variable transport and recombination times of the photocarriers result in distinct τ rise and τ fall . Similar observations have been documented in the literature concerning 2D photodetectors. , In addition, the underlying GaSe mitigates adverse effects on the SiO 2 substrate and substantially improves the carrier mobility, which accelerates the transportation of photocarriers.…”