Self-powered photodetectors based on β-Ga2O3/4H–SiC heterojunction with ultrahigh current on/off ratio and fast response

Highly sensitive solar-blind deep ultraviolet photodetector based on graphene/PtSe2/β-Ga2O3 2D/3D Schottky junction with ultrafast speed

“…Owing to the intensified carrier recombination at a higher light intensity, both R and D * show an increasing trend with the decrease of light intensity [35]. Note that the maximum R and D * values of 76.2 mA/W and 1.93 × 10 13 Jones are achieved at a low light intensity of 0.13 W/cm 2 , which are not only much better than UV detectors made of monolayer GaS (50 mA/W, 1.4 × 10 12 Jones) [36] and SnS2 nanosheets (0.218 mA/W, 3.53 × 10 8 Jones) [37], but also superior to most of β-Ga2O3-based self-driven UV photodetectors, such as MoS2/β-Ga2O3 (2.05 mA/W, 1.21 × 10 11 Jones) [29], diamond/β-Ga2O3 (0.2 mA/W, 6.9 × 10 9 Jones) [38], and β-Ga2O3/SiC (10.35 mA/W, 8.8 × 10 9 Jones) [16].…”

“…To circumvent these issues, an emerging important technique combining Ga2O3 with all kinds of materials including graphene, SiC, ZnO, and GaN for the development of functional junction devices has been successfully and extensively adopted to further enhance device performances (e.g. fast response, high responsivity, and large specific detectivity), which has been proved to be the most effective approach that also comes along with a simple preparation process [7,12,16,17]. For instance, benefiting from the avalanche multiplication effect, the as-assembled ZnO-Ga2O3 core-shell heterojunction photodetector exhibits a large responsivity (R) of ~ 1.3 × 10 3 A/W, an ultrahigh specific detectivity (D*) up to ~ 9.91 ×10 14 Jones, and a fast response speed shorter than 20 μs [13].…”

A Strategic Review on Gallium Oxide Based Deep‐Ultraviolet Photodetectors: Recent Progress and Future Prospects

“…A self‐powered PD was realized by growing n‐type polycrystalline β‐Ga 2 O 3 thin film on p‐type 4H‐SiC substrate. [ 227 ] The subsequent device showed a high current on/off ratio of 1655 and an ultrafast response in milliseconds under zero bias which is attributed to the quick separation of the photogenerated electron–hole pairs driven by the in‐built electric field at the heterojunctions interface. Even a photoelectrochemical (PEC) type self‐powered PD has been fabricated by He et al.…”

Balancing the Transmittance and Carrier‐Collection Ability of Ag Nanowire Networks for High‐Performance Self‐Powered Ga2O3 Schottky Photodiode

“…[ 46 ] The O 1s peak in Figure 1d is fitted by two separate peaks: O I peak at 530.6 eV is related to the O 2‐ ions in the oxygen vacancy free regions, O II peak at 532.4 eV can be attributed to the O 2‐ ions in oxygen‐deficient regions. [ 5,25,47 ] Similar to other oxide semiconductor, the elimination of intrinsic oxygen vacancy defects remains a great challenge in material area. [ 48 ]…”

“…[ 14 ] Since p‐type doping is rather difficult for Ga 2 O 3 , most self‐powered Ga 2 O 3 SBPDs are based on heterojunctions and Schottky junctions. Till now, the heterojunctions of Ga 2 O 3 with other WBG semiconductors (e.g., Nb:SrTiO 3 (NSTO), [ 5 ] ZnO, [ 14,18–21 ] GaN, [ 15,22 ] CuSCN, [ 23 ] diamond, [ 24 ] 4H‐SiC, [ 25 ] NiO, [ 26,27 ] γ‐CuI, [ 28 ] and CuMO 2 (M = Ga 3+ , Cr 3+ ), [ 29 ] ) organic conductive polymers (e.g., poly(3,4‐ethylenedioxythiophene):polystyrene sulfonate, or PEDOT:PSS), [ 17,30–32 ] 2D materials (e.g., MoS 2 ), [ 33 ] and Si, [ 34 ] have been utilized in self‐powered SBPDs. Although much impressive progress has been achieved, heterojunction‐based Ga 2 O 3 device is hindered by several limitations, including extra interface states induced by lattice mismatch, [ 30 ] carrier blocking from imperfect band alignment, [ 20 ] nonsolar‐blind response due to the small bandgap of the foreign substrate, [ 35 ] and complicated fabrication process.…”