Self-powered nanodevices for fast UV detection and energy harvesting using core-shell nanowire geometry

Lin, Chun‐Ho; Fu, Hui Chun; Lien, Der Hsien; Hsu, Chia Yang; He, Jr Hau

doi:10.1016/j.nanoen.2018.06.065

Cited by 40 publications

(12 citation statements)

References 53 publications

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“…The other one is photovoltaic PD based on the photovoltaic effect. According to the charge separation features of different interfaces, they can be divided into three types: Schottky junction, p–n/n–n junction, and PEC cell . Zhao et al constructed a self‐powered solar‐blind PD based on a highly crystallized ZnO–Ga 2 O 3 core–shell heterostructure microwire .…”

Section: Conclusion and Prospectivementioning

confidence: 99%

Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

Ouyang

Teng

et al. 2019

Adv Funct Materials

359

211

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Semiconductor-based photodetectors (PDs) convert light signals into electrical signals via the photoelectric effect, which involves the generation, separation, and transportation of the photoinduced charge carriers, as well as the extraction of these charge carriers to external circuits. Because of their specific electronic and optoelectronic properties, metal oxide semiconductors are widely used building blocks in photoelectric devices. However, the compromise between enhancing the photoresponse and reducing the rise/ decay times limits the practical applications of PDs based on metal oxide semiconductors. As the behaviors of the charge carriers play important roles in the photoelectric conversion process of these PDs, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge-carrier behaviors and improve the photoelectric performance of related PDs. This review aims to introduce and summarize the latest researches on enhancing the photoelectric performance of PDs based on metal oxide semiconductors via chargecarrier engineering, and proposes possible opportunities and directions for the future developments of these PDs in the last section.

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Section: Conclusion and Prospectivementioning

confidence: 99%

Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

Ouyang

Teng

et al. 2019

Adv Funct Materials

359

211

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“…Harvesting the renewable energy from environment is an effective solution. Various energy harvesting technologies have been reported in recent years, such as photovoltaics for the energy from light, nanogenerators for the mechanical energy, and thermoelectric generator for the energy from heat . Construction of the built‐in electric field by Schottky or p–n junctions has been a widely adopted approach to self‐powered UV photodetectors .…”

Section: Introductionmentioning

confidence: 99%

Solution‐Processed Self‐Powered Transparent Ultraviolet Photodetectors with Ultrafast Response Speed for High‐Performance Communication System

Fang

Zheng

et al. 2019

Adv Funct Materials

140

111

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Transparent ultraviolet (UV) photodetectors are an essential component of nextgeneration "see-through" electronics. However, the current photodetectors often suffer from relatively slow response speeds and high driving voltages. Here, all-solution-processed UV photodetectors are reported that are facilely prepared from environmentally friendly and abundant materials. The UV photodetectors are composed of a titanium dioxide thin film as the photosensitive layer sandwiched between two different transparent electrodes to form asymmetric Schottky junctions. The photodetector with high optical transparency can operate at zero bias because of spontaneous separation of photogenerated electron-hole pairs by the built-in electric field. The resulting self-powered photodetector displays high sensitivity to broadband UV light (200-400 nm). In particular, an ultrafast response speed up to 44 ns is obtained, representing a significant improvement over those of the conventional transparent photodetectors. Moreover, the photodetector has been successfully applied, for the first time, in a UV communication system as the self-powered signal receiver. This work uniquely combines the features of high optical transparency and self-power ability into UV photodetectors and would enable a broad range of optoelectronic applications.

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“…To date, there have been a variety of semiconductors that have been exploited for photodetection applications, such as crystalline Si, [ 18,19 ] carbon nanotubes, [ 20,21 ] hybrid perovskites, [ 22–26 ] group II‐VI and III‐V compounds, [ 27–30 ] and organic semiconductors. [ 31,32 ] Especially, photodetectors operating in the range from VIS to IR are widely studied because of their extensive applications in optical communications, surveillance, thermal imaging, biomedicine, and so on.…”

Section: Introductionmentioning

confidence: 99%

Recent Progress in Short‐ to Long‐Wave Infrared Photodetection Using 2D Materials and Heterostructures

Guan

Periyanagounder

et al. 2020

Advanced Optical Materials

142

118

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The extraordinary electronic, optical, and mechanical characteristics of 2D materials make them promising candidates for optoelectronics, specifically in infrared (IR) detectors owing to their flexible composition and tunable optoelectronic properties. This review presents the recent progress in IR detectors composed of 2D materials and their hybrid structures, including graphene, black phosphorous, transition metal dichalcogenides, halide perovskite as well as other new layered materials and their heterostructures. The focus is on the short‐wave, mid‐wave, and long‐wave infrared regimes, which pose a grand challenge for rational materials and device designs. The dependence of the device performance on the optical and electronic properties of 2D materials is extensively discussed, aiming to present the general strategies for designing optoelectronic devices with optimal performance. Furthermore, the recent results on 2D material‐based heterostructures are presented with an emphasis on the relationship between band alignment, charge transfer, and IR photodetection. Finally, a summary is given as well as the discussion of existing challenges and future directions.

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Self-powered nanodevices for fast UV detection and energy harvesting using core-shell nanowire geometry

Cited by 40 publications

References 53 publications

Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

Solution‐Processed Self‐Powered Transparent Ultraviolet Photodetectors with Ultrafast Response Speed for High‐Performance Communication System

Recent Progress in Short‐ to Long‐Wave Infrared Photodetection Using 2D Materials and Heterostructures

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