Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction

Foisal, Abu Riduan Md; Dinh, Toan; Nguyen, Viet Thanh; Tanner, Philip; Phan, Hoang‐Phuong; Nguyen, Tuan‐Khoa; Haylock, Ben; Streed, Erik; Lobino, Mirko; Dao, Dzung Viet

doi:10.1109/ted.2019.2899742

Cited by 48 publications

(43 citation statements)

References 39 publications

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“…For implementation of optothermotronics, nonuniform light illumination can be consequently generated by the integration of a LED, including the green gallium nitride Al(Ga)N LED grown directly on SiC ( fig. S8B) (35). In addition, our experimental data ( fig.…”

Section: Discussionmentioning

confidence: 57%

Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics

et al. 2020

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The thermal excitation, regulation, and detection of charge carriers in solid-state electronics have attracted great attention toward high-performance sensing applications but still face major challenges. Manipulating thermal excitation and transport of charge carriers in nanoheterostructures, we report a giant temperature sensing effect in semiconductor nanofilms via optoelectronic coupling, termed optothermotronics. A gradient of charge carriers in the nanofilms under nonuniform light illumination is coupled with an electric tuning current to enhance the performance of the thermal sensing effect. As a proof of concept, we used silicon carbide (SiC) nanofilms that form nanoheterostructures on silicon (Si). The sensing performance based on the thermal excitation of charge carriers in SiC is enhanced by at least 100 times through photon excitation, with a giant temperature coefficient of resistance (TCR) of up to −50%/K. Our findings could be used to substantially enhance the thermal sensing performance of solid-state electronics beyond the present sensing technologies.

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Section: Discussionmentioning

confidence: 57%

Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics

et al. 2020

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“…dq/dω is the spectral heat flux, and e is the elementary charge. The dark current I 0 of the SiC/Si cell is assumed to be 10 −4 A m −2 based on the reference [37]. Open circuit voltage is obtained by…”

Section: Theoretical Fundamentals For Analyzing Near-field Tpvsmentioning

confidence: 99%

Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics

et al. 2022

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Thermophotovoltaics is a promising technology for heat recovery and has garnered tremendous attention in the last decades. This work theoretically evaluates the performance of a thermophotovoltaic system equipped with refractory all-ceramic selective thermal emitters made of boron carbide, silicon carbide and beryllium oxide for a high working temperature of 2000 ∘C, which corresponds to the external quantum efficiency of a SiC/Si tandem cell. The influence of thickness and filling ratio on the emissivity of thermal emitters over the wavelength ranging from 0.2 μm to 2.5 μm is studied. The corresponding spectral heat flux and output power are analyzed as well. For a specific configuration, the parameters for the thermophotovoltaic system are obtained, including short circuit current, open circuit voltage, fill factor, total heat flux, output power and conversion efficiency. The proposed all-ceramic thermal emitter ensures the robustness in the high-temperature working condition due to its thermal stability. The tuning of emissivity is achieved and analyzed based on distinct emitter nanostructures, and the further influence on the thermophotovoltaic system performance is deeply explored. This work sheds light on research of high-temperature thermal management and power generation.

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“…Importantly, the heterojunction devices provide substantial opportunities to modulate the spectral bandwidth of the photodetection. [ 7–9 ] Recently, lead halide perovskite (LHP) materials with a formula of ABX 3 (A = CH 3 NH 3 (MA), and Cs, etc. ; B = Pb; X = Cl, Br, and I) featured with superior optoelectrical properties such as long charge carrier diffusion length, high optical absorption coefficient, and low‐temperature solution‐processed ability, have been widely regarded as important candidates for the fabrication of high‐performance PDs.…”

Section: Introductionmentioning

confidence: 99%

Interfacial Engineering with Aluminum Oxide toward an Improved Self‐Powered Narrowband Visible‐Light Photodetection in Lead Halide Perovskite CH₃NH₃PbBr₃/p‐Si Heterojunctions

Shen

Yang

Chen

et al. 2022

Adv Materials Inter

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Semiconductor heterojunctions consisting of lead halide perovskite (LHP) and silicon materials are important candidates for the fabrication of self‐powered visible‐light photodetectors. However, the interface recombination caused by interface trap states greatly deteriorates the performance of self‐powered photodetection, but fortunately, it can be suppressed by interfacial engineering. In this work, self‐powered narrowband visible‐light photodetection is demonstrated in the LHP CH3NH3PbBr3/p‐Si heterojunctions. Notably, the self‐powered photodetection performance is greatly enhanced by introducing an atomic‐layer‐deposition‐grown amorphous Al2O3 thin interlayer. Electrical and optical properties measurements suggest that the Al2O3 thin interlayer effectively passivates (reduces) the heterojunction interface trap states. On this basis, the CH3NH3PbBr3/Al2O3/p‐Si heterojunctions exhibit a decreased dark current and increased photocurrent simultaneously compared to CH3NH3PbBr3/p‐Si heterojunctions. Finally, a responsivity as high as 0.39 A W−1 and detectivity as high as 8.45 × 1012 Jones under the bias voltage of 0 V are obtained, which are higher than most reported state‐of‐the‐art devices. The results reported in this work will provide valuable pathways for the fabrication of high‐performance self‐powered narrowband photodetectors based on LHP/Si heterojunctions.

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Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction

Cited by 48 publications

References 39 publications

Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics

Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics

Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics

Interfacial Engineering with Aluminum Oxide toward an Improved Self‐Powered Narrowband Visible‐Light Photodetection in Lead Halide Perovskite CH₃NH₃PbBr₃/p‐Si Heterojunctions

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Self-Powered Broadband (UV-NIR) Photodetector Based on 3C-SiC/Si Heterojunction

Cited by 48 publications

References 39 publications

Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics

Optothermotronic effect as an ultrasensitive thermal sensing technology for solid-state electronics

Refractory All-Ceramic Thermal Emitter for High-Temperature Near-Field Thermophotovoltaics

Interfacial Engineering with Aluminum Oxide toward an Improved Self‐Powered Narrowband Visible‐Light Photodetection in Lead Halide Perovskite CH3NH3PbBr3/p‐Si Heterojunctions

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Interfacial Engineering with Aluminum Oxide toward an Improved Self‐Powered Narrowband Visible‐Light Photodetection in Lead Halide Perovskite CH₃NH₃PbBr₃/p‐Si Heterojunctions