Self-Powered Broadband Photodetector Based on a Monolayer InSe p - i - n Homojunction

Promising transport properties of multifunctional monolayer GeSe nanodevices

“…Furthermore, the homojunction has a moderate photocurrent response in the near-infrared (NIR) and ultraviolet (UV) regions that implies its suitability as a broadband photodetector. The maximum photocurrent densities for Z- and A-type ML GeSe p–i–n homojunctions approached 58 and 45 nA m −1 at zero bias, respectively, which are greater than those observed for InSe p–i–n junctions (13.13 nA m −1 ) 10 and Bi 2 O 2 Se p–n junctions (35 nA m −1 ). 48 These results imply that ML GeSe p–i–n homojunction phototransistors exhibit excellent self-powered phenomena and photocurrent anisotropy.…”

“…Over the past few decades, two-dimensional (2D) materials have garnered substantial attention due to their outstanding thermoelectric transport properties, high carrier transport, strong interaction with light, and channels that are easily gate-controlled and atomically thin. 1–4 A diverse array of 2D semiconductors have been theoretically studied and experimentally synthesized, such as MoSi 2 N 4 , 5,6 silicene, 7 phosphorene, 8 graphene/borophene heterojunctions, 9 InSe p–i–n homojunctions, 10 and WSe 2 /MoS 2 lateral heterojunctions. 11 Because of the diverse phase and morphology of 2D semiconductors, they offer considerable potential for applications in thermoelectric devices, 12 rectifying diodes, 13 field effect transistors, 14 spintronic devices, 15 photovoltaic devices, and photodetectors.…”

Two-dimensional HfS2–ZrS2 lateral heterojunction FETs with high rectification and photocurrent

“…To further reduce the size of the device and increase its compactness, lateral junctions are constructed to design multifunctional devices, [27][28][29][30][31][32][33][34][35][36][37][38][39] such as field effect transistors (FETs), rectifiers, inverters, photovoltaics, photodetectors, light-emitting diodes, and neuromorphic devices. For example, Yu et al synthesized WS 2 -MoS 2 lateral heterojunctions, which present the I photo /I dark ratio of 6000 and detectivity of 1.1 × 10 14 Jones.…”

Highly Polarization-Deep-Ultraviolet-Sensitive β-Ga2O3 Epitaxial Films by Disrupting Rotational Symmetry and Encrypted Solar-Blind Optical Communication Application

“…Ultraviolet light with wavelengths ranging from 200 to 280 nm, known as solar-blind ultraviolet, is not disturbed by solar background radiation, making it highly sensitive. − However, in complex environments with human interference, stealth, and camouflage, the detection distance is significantly reduced, and target recognition becomes challenging, making traditional intensity detection modes insufficient for effective target information acquisition and recognition. Unlike intensity, the polarization state of light reflects the amplitude and direction changes of the electromagnetic wave’s electric field vector as it propagates, representing the vector characteristics of light.…”