Long-wavelength InGaN-based microlight emitting diodes
(μLEDs)
have the potential for novel display and visible light communication
(VLC). In this study, red and yellow μLEDs were fabricated for
VLC applications as VLC transmitters and photodiodes (PDs). Stress
modulation engineering and atomic layer deposition (ALD) techniques
were employed to improve the transmission and detection performance.
When operating as VLC transmitters, the red and yellow μLEDs
exhibits high modulation bandwidth of 439.7 and 532.5 MHz at 2000
A/cm2, achieving a data rate of 1.9 and 2.4 Gbps, respectively.
When operating as VLC PDs, long-wavelength emitting μLEDs with
high indium component QW exhibit longer wavelength absorption edge,
which is expected to achieve higher responsivity to blue light while
filtering out the fluorescence component. The response spectra of
the red and yellow μLED PDs overlap a large portion of the blue
signal. The red and yellow μLEDs achieved responsivities of
up to 0.208 and 0.135 A/W, respectively, for 450 nm light, higher
than those of the reported InGaN LED-based photodetectors. In addition,
owing to the wavelength selectivity, the long-wavelength μLED
PDs could filter the slow fluorescence emission, thus achieving white
light modulation bandwidth several times that achieved by adopting
a silicon-based detector. A white-light VLC system was experimentally
demonstrated. Maximum transmission rates of 1.2 and 1.05 Gbps were
achieved based on red and yellow μLEDs operating as PDs, respectively.
The findings of this study indicate that employing red μLED
pixels as wavelength-selective PDs in future μLED information
displays is an effective strategy for phosphor-based white-light communication.