Self-Phase Modulation in Semiconductor Optical Amplifiers: Impact of Amplified Spontaneous Emission

Baveja, Prashant P.; Maywar, Drew N.; Kaplan, Aaron M.; Agrawal, Govind P.

doi:10.1109/jqe.2010.2048743

Cited by 53 publications

(32 citation statements)

References 36 publications

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“…This amplified stimulated emission (ASE) is important for the device characteristics and performance, as it can become strong enough to influence the charge-carrier dynamics [BER04a,MEL08,BAV10]. Furthermore, it will create an -in most cases unwantednoise background that will deteriorate the signal quality of the optical input signal.…”

Section: Modeling Of Spontaneous Emissionmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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In this thesis the dynamics and performance of optoelectronic devices based on semiconductor quantum-dots are investigated.In the first part, the dynamics of quantum-dot lasers under external perturbations is discussed. Using a microscopically based balance equation model that incorporates detailed charge-carrier scattering dynamics and the possibility to describe nonequilibrium between intra-band electronic states, the relaxation oscillations of the quantum-dot laser are investigated. Three qualitatively different dynamic regimes are identified in dependence of the scattering rates -the "constantreservoir" regime for slow scattering, the "overdamped" regime, and the "synchronized" regime for high scattering -characterized by a varying degree of nonequilibrium between the quantum-dot and reservoir states.Important differences to conventional lasers are found in the modulation response and the dynamics in optical injection and feedback setups. Common theoretical models and approaches used to describe these applications are shown to yield inaccurate predictions, especially in the "constant-reservoir" and "overdamped" dynamic regimes. An important consequence is that the amplitude-phase coupling in quantum-dot lasers, commonly described by the α-factor, differs from conventional descriptions due to the desynchronization of gain and refractive index. While the α-factor describes bifurcations of fixed points accurately, it fails in describing dynamic solutions and overestimates the extent of complex dynamics. The observed low sensitivity to optical perturbations in quantum-dot lasers can therefore be attributed partly to the charge-carrier nonequilibrium. Three quantum-dot laser models on different levels of sophistication are presented that can accurately describe the quantum-dot nonequilibrium dynamics.In the second part of the thesis, the performance of quantum-dot semiconductor optical amplifiers is investigated, and two types of applications unique to quantum-dots as active medium are discussed. The ground and excited states of the quantum-dots allow an ultra-broad-band amplification of optical data streams. Amplified signals on the ground-state frequencies are shown to generally exhibit higher quality than on the excited state, due to a lower sensitivity of the groundstate to carrier-density variations. Nevertheless the quantum-dot amplifier is found to allow effective amplification on both frequency ranges. Furthermore, a parameter range is identified that allows for a simultaneous amplification of data signals on the ground and excited state in a counter-propagating setup.The long microscopically polarization dephasing times in quantum-dots are found to enable quantum-coherent interactions on a macroscopic scale at room-temperature. By comparison with experiments, the occurrence of Rabi-oscillations by amplification of ultra-short pulses is demonstrated. Quantum-dot based devices could therefore be used for future applications based on quantum-coherent effects.

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Section: Modeling Of Spontaneous Emissionmentioning

confidence: 99%

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Lingnau

2015

Springer Theses

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“…It can be seen that this ratio decreases for increasing QD-SOA current thus reducing the effective gain by up to −25%. The inset shows the input spectrum of the mode-locked laser as well as the amplified output spectrum of the QD-SOA clearly indicating spectral distortions that originate from self-phase-modulation [66].…”

Section: Qd-soa Noisementioning

confidence: 99%

Ultra‐Short‐Pulse QD Edge‐Emitting Lasers

Breuer

Syvridis

Рафаилов

2014

The Physics and Engineering of Compact Quantum Dot‐based Lasers for Biophotonics

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IntroductionHigh-power, electrically pumped edge-emitting monolithic semiconductor lasers based on InAs/GaAs quantum dots (QDs) offer significant advantages including ultra-short pulse generation due to ultrafast gain and absorption recovery [1, 2] and emission energies in the near-infrared spectral range [3]. Owing to their inherent inhomogeneous QD size distribution, a broadening of gain and absorption profile is realized, leading to broadband wavelengths emission. This inhomogeneous broadening together with ultrafast carrier dynamics is particularly advantageous for ultrafast applications including the generation, propagation, and amplification of subpicosecond optical pulses with high pulse peak power [4] and the generation of spectrally tunable emission [5,6]. The reduced density of states allows for the exploitation of QD materials in harnessing spectral versatility in novel dual-state emission. The spectral coverage of these QD lasers perfectly matches a wide range of relevant biophotonic applications including nonlinear excitation imaging techniques. The unique combination of efficient light generation, ultrafast carrier dynamics, and broadband gain bandwidth can deliver exclusive advantages in ultrafast microelectronic scale components, thereby stimulating major advances in ultrafast science and technology.In order to enable initial device design and optimization of novel pulse generating QD lasers and amplifiers, a new and efficient theoretical framework is presented as briefly introduced in Section 2.2. This framework takes into account specifically fundamental aspects associated with QD gain materials and allows for modeling of both continuous-wave (CW) emission and ultra-short pulse generation via passive mode-locking (PML) and subsequent amplification. The obtained understanding is applied to technologically realize and optimize QD laser and amplifier structures with particularly broad gain bandwidth enabling spectral versatility through broadband tunability of CW-emission generated in the visible wavelength range by second-harmonic-generation (SHG). This broad wavelength range is accessible only by the QD features as presented in Section 2.3. Novel functionalities based on the broad gain bandwidth and sophisticated QD laser design are explored inThe Physics and Engineering of Compact Quantum Dot-based Lasers for Biophotonics, First Edition. Edited by Edik U. Rafailov.

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“…The paper Mecozzi and Mørk (1997) analyzes the saturation effects in non-degenerate FWM between short optical pulses in SOA, and the impact on the noise characteristics is also investigated. The paper Baveja et al (2010) presents a detailed study of the impact of ASE on SPM in SOA, including the nonlinear phase shift, frequency chirp, spectrum, and shape of amplified picosecond pulses at a range of drive currents.…”

Section: Introductionmentioning

confidence: 99%

A wavelength conversion scheme based on SPM and FWM for distributed satellites system with multiple wavelength channels

Dong

Zhao

Zheng³

et al. 2014

Opt Quant Electron

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Aiming at the characteristics of distributed satellites system that the information exchanging and wavelength conversion are frequent but the payload is limited, a wavelength conversion scheme based on the self-phase modulation (SPM) and the four-wave mixing (FWM) is put forward, which can substitute several pump lasers in case of multiple wavelength channels. By utilizing the SPM in high nonlinear fiber to broaden the spectrum of initial signal, a pre-conversion signal is obtained as the pump light for wavelength conversion through an offset filtering. Then the wavelength conversion is realized based on the FWM in semiconductor optical amplifier. The principle of the scheme is deduced theoretically, and the relationship between conversion properties and structural parameters is analyzed. The simulation results show that the scheme can improve the quality of signal to some extent when completing a wavelength conversion, the Q factor improvement can be of 3 dB at most, while the conversion efficiency can reach to 20 dB.

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Self-Phase Modulation in Semiconductor Optical Amplifiers: Impact of Amplified Spontaneous Emission

Cited by 53 publications

References 36 publications

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Nonlinear and Nonequilibrium Dynamics of Quantum-Dot Optoelectronic Devices

Ultra‐Short‐Pulse QD Edge‐Emitting Lasers

A wavelength conversion scheme based on SPM and FWM for distributed satellites system with multiple wavelength channels

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