Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide

Delcourt, Enguerran; Jebali, Nessim; Bodiou, Loïc; Baillieul, Marion; Baudet, Émeline; Lemaître, Jonathan; Nazabal, Virginie; Dumeige, Yannick; Charrier, Joël

doi:10.1364/ome.393535

Cited by 9 publications

(3 citation statements)

References 27 publications

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“…The aim of this paper is to provide a study of photoinduced changes in Ge-Sb-Se chalcogenide thin films which are of particular interest in the field of photonic integrated circuits for their potential application in non-linear optics [12] and optical sensors in midinfrared domain [13,14]. The nominal composition of Ge 25 Sb 10 Se 65 was chosen based on our previous work related to photosensitivity study on this system [15].…”

Section: Introductionmentioning

confidence: 99%

Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films

Halencovic¹,

Kotrla²,

Gutwirth³

et al. 2022

Photon. Res.

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The kinetics of photoinduced changes, namely, photobleaching and photodarkening in sputtered ternary Ge 29 Sb 8 Se 63 thin films, was studied. The study of time evolution of the absorption coefficient Δ α ( t ) upon room-temperature near-bandgap irradiation revealed several types of photoinduced effects. The as-deposited films exhibited a fast photodarkening followed by a dominative photobleaching process. Annealed thin films were found to undergo photodarkening only. The local structure studied by Raman scattering spectroscopy showed significant structural changes upon thermal annealing, which are presumably responsible for a transition from the photobleaching observed in as-deposited and reversible photodarkening in annealed thin films. Moreover, a transient photodarkening process was observed in both as-deposited and annealed thin films. The influence of the initial film thickness and laser optical intensity on the kinetics of photoinduced changes is discussed.

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Section: Introductionmentioning

confidence: 99%

Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films

Halencovic¹,

Kotrla²,

Gutwirth³

et al. 2022

Photon. Res.

Self Cite

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“…Their amorphous nature enables them to be both monolithically and heterogeneously integrated with a wide variety of materials at a low deposition temperature, compatible with the COMS back-end process. These remarkable material properties make them a viable platform for future multilayer optical communications systems [14][15][16][17][18][19][20][21][22][23], mid-infrared integrated photonic devices [22,24,25], sensors [26][27][28] and flexible photonic devices [29][30][31][32].…”

Section: Introductionmentioning

confidence: 99%

Interlayer Slope Waveguide Coupler for Multilayer Chalcogenide Photonics

Luo

Sun

et al. 2022

Photonics

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The interlayer coupler is one of the critical building blocks for optical interconnect based on multilayer photonic integration to realize light coupling between stacked optical waveguides. However, commonly used coupling strategies, such as evanescent field coupling, usually require a close distance, which could cause undesired interlayer crosstalk. This work presents a novel interlayer slope waveguide coupler based on a multilayer chalcogenide glass photonic platform, enabling light to be directly guided from one layer to another with a large interlayer gap (1 µm), a small footprint (6 × 1 × 0.8 µm3), low propagation loss (0.2 dB at 1520 nm), low device processing temperature, and a high bandwidth, similar to that in a straight waveguide. The proposed interlayer slope waveguide coupler could further promote the development of advanced multilayer integration in 3D optical communications systems.

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“…In 2020, Khonina et al [21] presented a significant improvement of the evanescent field ratio in a ridge waveguide modified into a dual hybrid plasmonic waveguide by tapering the middle section of the waveguide and placing a gold layer on both sides with a subwavelength gap. In 2020, Delcourt et al [22] investigated third-order optical nonlinear effects relying on the instantaneous Kerr effect in a straight chalcogenide ridge waveguide.…”

Section: Introductionmentioning

confidence: 99%

Dispersion Analysis and Material Property Identification of a Circular Piezoelectric Ridge Waveguide

2021

Journal of Computational and Nonlinear Dynamics

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This study investigates the dispersive properties of ridge waves that travel circumferentially around piezoelectric circular ridge waveguides and investigates their resonant modes. Based on the variable separation method and Hamilton's principle, the displacement of ridge waveguides is represented as the product of a cross-sectional coordinate-dependent function and the propagator along the circumference of a circular ridge waveguide. The dispersion curves of the flexural waves and resonant frequencies corresponding to ridge waveguides are solved numerically by applying the bi-dimensional finite element method (Bi-d FEM) and using the 3D ANSYS package. The estimated impedance curves are compared with the predicted dispersion curves of waves from ridge waveguides to validate the proposed numerical approach. The geometric parameters and elastic constants of the piezoelectric circular ridge waveguide are determined through an inverse scheme that is based on the measured resonant frequencies and uses the modified simplex method. The numerical and experimental results show that, using the modified simplex method to inverse calculate the elastic constants and geometric parameters of the piezoelectric circular ridge waveguides, a good degree of accuracy and sensitivity can be achieved.

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Self-phase modulation and four-wave mixing in a chalcogenide ridge waveguide

Cited by 9 publications

References 27 publications

Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films

Insight into the photoinduced phenomena in ternary Ge-Sb-Se sputtered thin films

Interlayer Slope Waveguide Coupler for Multilayer Chalcogenide Photonics

Dispersion Analysis and Material Property Identification of a Circular Piezoelectric Ridge Waveguide

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