Self-Organized Formation of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>GaSb</mml:mi><mml:mo>/</mml:mo><mml:mi>GaAs</mml:mi></mml:math>Quantum Rings

Timm, Rainer; Eisele, H.; Lenz, Andreas; Иванова, Л. Д.; Balakrishnan, Ganesh; Huffaker, Diana L.; Dähne, M.

doi:10.1103/physrevlett.101.256101

Cited by 72 publications

(55 citation statements)

References 29 publications

(40 reference statements)

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“…For light generation purposes, however, the reduction in electron-hole overlap could be detrimental to operating performance. Fabrication of GaSb/GaAs nanostructures by molecular beam epitaxy (MBE) has been shown to result in the formation of nano-rings, [8][9][10] rather than dots, under specific growth conditions. GaSb quantum rings [ Fig.…”

mentioning

confidence: 99%

“…The large effective mass of the heavy hole, and composition modulation in the GaSb nanostructure will likely result in a hole wavefunction that is tightly confined to a small region within the ring structure, rather than occupying the whole circumference. Cross-sectional scanning tunnelling microscopy has helped to reveal the formation mechanism of these nanostructures, 8,14 an example cross-sectional image of a quantum ring is shown in Fig. 1(a).…”

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confidence: 99%

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Photoluminescence studies of individual and few GaSb/GaAs quantum rings

et al. 2014

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We present optical studies of individual and few GaSb quantum rings embedded in a GaAs matrix. Contrary to expectation for type-II confinement, we measure rich spectra containing sharp lines. These lines originate from excitonic recombination and are observed to have resolution-limited full-width at half maximum of 200 μeV. The detail provided by these measurements allows the characteristic type-II blueshift, observed with increasing excitation power, to be studied at the level of individual nanostructures. These findings are in agreement with hole-charging being the origin of the observed blueshift.

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confidence: 99%

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confidence: 99%

Photoluminescence studies of individual and few GaSb/GaAs quantum rings

et al. 2014

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“…Capping of quantum dots has been widely studied experimentally, for example [44,45,46,47]. It has been established that the quantum dots can erode significantly during capping by a process that is not well understood (e.g.…”

Section: Cappingmentioning

confidence: 99%

“…Refs. [45,46,47]). Our results not only are able to capture these phenomena, but they also provide insight into the mechanisms behind them.…”

Section: Cappingmentioning

confidence: 99%

Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting layers, quantum dots, capping, and nanorings

Schulze

Smereka

2012

Phys. Rev. B

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A new kinetic Monte Carlo algorithm that efficiently accounts for elastic strain is presented and applied to study various phenomena that take place during heteroepitaxial growth. For example, it is demonstrated that faceted quantum dots occur via the layer-by-layer nucleation of pre-pyramids on top of a critical layer with faceting occurring by anisotropic surface diffusion. It is also shown that the dot growth is enhanced by the depletion of the critical layer which leaves behind a wetting layer. Capping simulations provide insight into the mechanisms behind dot erosion and ring formation. The algorithm used for the simulations presented here is based on the observation that adatom and dimer motion is essentially decoupled from the elastic field. This is exploited by decomposing the film into two parts: the weakly bonded portion and the strongly bonded portion. The weakly bonded portion is taken to evolve independent of the elastic field. In this way the elastic field need only be updated infrequently. Extensive validation reveals that there is little loss of fidelity but the algorithm is fifteen to twenty times faster.

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“…14 When considering some variance in the QR height and ring width, the associated width of the energy distribution will primarily depend on the smaller dimension. Since H < DR for a variety of growth conditions and material systems, 1,15,16 the height distribution of the rings is expected to determine the inhomogeneous broadening of the hole states, with the integrated radial confinement only offsetting the mean energy.…”

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confidence: 99%

Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

Wagener

Carrington

Botha

et al. 2013

Applied Physics Letters

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The extended photo-response of solar cells containing ten periods of GaSb/GaAs quantum rings imbedded in the p-i-n junction has been described using a single-band representation of the type-II quantum ring structure. By fitting the experimental data, the authors were able to deduce that the quantum rings are well represented by a Gaussian height distribution and a large valence band discontinuity. The simulated band of states is shown to be well matched to the photoluminescence analysis of the structure, with the inhomogeneous size distribution resulting in a band of hole states roughly 390 meV above the valence band.

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Self-Organized Formation ofGaSb/GaAsQuantum Rings

Cited by 72 publications

References 29 publications

Photoluminescence studies of individual and few GaSb/GaAs quantum rings

Photoluminescence studies of individual and few GaSb/GaAs quantum rings

Kinetic Monte Carlo simulation of heteroepitaxial growth: Wetting layers, quantum dots, capping, and nanorings

Simulation of the enhanced infrared photoresponse of type-II GaSb/GaAs quantum ring solar cells

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