Abstract:Self-metalation is ap romising route to include as ingle metal atom in at etrapyrrolic macrocycle in organic frameworks supported by metal surfaces.T he molecule-surface interaction may providet he charge transfer and the geometric distortion of the molecular plane necessary for metal inclusion. However,a tametal surface the presence of an activation barrier can represent an obstacle that cannot be compensated by ah igher substrate temperature without affecting the layer integrity.The formation of the intermed… Show more
“…However, it has been recently proven that by exposing the 2H-TPP/Pd(100) monolayer to 1 mbar O 2 the self-metalation reaction to PdTPP can be induced already at room temperature. 49 Evidence has been obtained by means of in situ IR-Vis SFG measurements ( Fig. 7a ).…”
Section: Solid–gas Interfaces From Uhv To Near-ambient Pressure: Oxyg...mentioning
confidence: 87%
“…oxygen binding, stabilization, and activation at Co tetrapyrroles on Au(111), 16 and the oxygen-induced self-metalation of 2H-TPP on Pd(100). 49 …”
Section: Solid–gas Interfaces From Uhv To Near-ambient Pressure: Oxyg...mentioning
Recent advances in the development of surface science methods have allowed to bridge, at least partially, the pressure gap between the ultra-high vacuum environment and some applicative conditions. This step...
“…However, it has been recently proven that by exposing the 2H-TPP/Pd(100) monolayer to 1 mbar O 2 the self-metalation reaction to PdTPP can be induced already at room temperature. 49 Evidence has been obtained by means of in situ IR-Vis SFG measurements ( Fig. 7a ).…”
Section: Solid–gas Interfaces From Uhv To Near-ambient Pressure: Oxyg...mentioning
confidence: 87%
“…oxygen binding, stabilization, and activation at Co tetrapyrroles on Au(111), 16 and the oxygen-induced self-metalation of 2H-TPP on Pd(100). 49 …”
Section: Solid–gas Interfaces From Uhv To Near-ambient Pressure: Oxyg...mentioning
Recent advances in the development of surface science methods have allowed to bridge, at least partially, the pressure gap between the ultra-high vacuum environment and some applicative conditions. This step...
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