Self-limiting mechanism in the atomic layer epitaxy of GaAs

Tischler, M. A.; Bedair, S. M.

doi:10.1063/1.96804

Cited by 88 publications

(11 citation statements)

References 6 publications

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“…This was accomplished by rotating the sample beneath the fixed part of the susceptor, effectively hiding it from exposure. 33 No detrimental effect to the surface morphology was detected upon examination ofQWs grown in this manner. Figure 7 shows the 4 K photoluminescence of a single QW grown with two cycles of ALE GaAs.…”

Section: Gainp and Galnp/gaas Quantum Well Structuresmentioning

confidence: 98%

Atomic-layer epitaxy for heterostructures

Bedair

1993

JOM

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Atomic-layer epitaxy offers the ultimate control of interface abruptness and thickness uniformity across a large-area wafer. In the work reported here, GaAs, AIGaAs, and In GaP were grown by atomic-layer epitaxy with one monolayer of growth per deposition cycle. Atomic-layer-epitaxy-grown AIGaAs/ GaAs quantum well structures showed excellent thickness uniformity, and resonant tunneling diodes showed excellent uniformity in both threshold voltage and threshold current. GaInP/GaAs quantum structures were grown and studied; they had well widths as thin as One lattice constant. This 5.6 A GaAs quantum well is believed to be one of the thinnest grown in this material system.

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Section: Gainp and Galnp/gaas Quantum Well Structuresmentioning

confidence: 98%

Atomic-layer epitaxy for heterostructures

Bedair

1993

JOM

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“…Atomic-layer-epitaxy is a growth technique in which the group III and group V precursors (or group II/VI precursors for II-VI compounds) are alternatively introduced in the reactor [29][30][31][32]. The selflimiting growth rate of one monolayer per cycle, under the appropriate growth conditions, allows precise control of the growth and an improved thickness uniformity.…”

Section: Intrinsic Carbon Dopingmentioning

confidence: 99%

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Abernathy

Hobson

1996

J Mater Sci: Mater Electron

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This paper is a review of the incorporation and behaviour of carbon in group III-V materials. Both vapour phase epitaxy and growth in ultra high-vacuum environments are covered. Particular attention is given to the factors which influence the carbon-uptake rate such as the growth temperature, ratio of group V to group III materials and parasitic interaction with other species at the growth front. Among the latter, the role of hydrogen is crucial not only to the understanding of the incorporation of carbon but also to its behaviour in the lattice. Consequently, this issue is thoroughly discussed for both growth methods. Potential sources for the introduction of carbon to the growth front are also compared in the light of their utility for obtaining high well-confined acceptor Profiles, such as are required in the latest-generation electronic and photonic devices. Finally, the material quality and dopant stability which can be obtained with carbon-doped materials will be briefly reviewed and, where possible, contrasted with that which can be obtained with other p-type dopants.

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“…En sí, ALE no es una nueva técnica de crecimiento epitaxial sino, más bien, es una modificación ingeniosa de la ya existente técnica de MBE, en la cual el sustrato es secuencialmente expuesto al flujo, atómico o molecular, de uno solo de los elementos constituyentes. ALE es una técnica de crecimiento epitaxial autorregulada (Tischler & Bedair, 1986) que permite el control del crecimiento "capa por capa".…”

Section: Introductionunclassified

Fabricación y caracterización de diodos emisores de luz con emisión en la región verde azul

Reyes

2017

Rev. Cient. Gen. José María Córdova

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Revista Científica General José María Córdova, Bogotá, Colombia, enero-junio, 2017 Recensión -Vol. 15, Núm. 19, pp. 337-347 issn 1900 Cómo citar este artículo: Salcedo, J.C. (2017, enero-julio Resumen. El pasado 7 de octubre de 2014 se anunció, por parte del correspondiente comité, que el premio Nobel de Física 2014 se les concedió a los japoneses Isamu Akasaki, Hiroshi Amano y Shuji Nakamura por la invención de los diodos emisores de luz (LED, por sus siglas en inglés) con emisión en la región verde-azul del espectro visible (Nakamura, Mukai & Senoh, 1991). La importancia de este invento está relacionada tanto con las potenciales aplicaciones de los LED azules como fuente de luz eficiente y ecológica, como en el desarrollo de los llamados sistemas cuánticos. Es así como actualmente el desarrollo de dispositivos electrónicos y opto-electrónicos, cuya región activa está constituida por estructuras cuánticas, está fuertemente modulado por la capacidad de fabricar dichas estructuras con una alta calidad cristalina, un alto control de la composición química y, sobre todo, con gran reproducibilidad. En este sentido, las técnicas de crecimiento epitaxial constituyen la piedra angular en el desarrollo tecnológico que supone la nano-electrónica. En este trabajo se plantean, en general, los diferentes procesos químicos y físicos que tienen lugar durante un crecimiento por Epitaxia de Capas Atómicas (Atomic Layer Epitaxy, ALE) de pozos cuánticos ultra-delgados (Ultra-Thin Quantum Wells, UTQW) de Zn X Cd 1-X. Se y se estudian, en particular, la cinética del proceso de adsorción de Zn dentro de la estructura cristalina en términos de una ecuación de reacción de primer orden que define la composición de la estructura en función de la temperatura del sustrato (Ts) y del flujo de átomos de zinc. Se obtienen los valores para la energía de activación, el factor pre-exponencial y la constante de adsorción de Zn. La composición química de los UTQW es uno de los parámetros más importantes para el diseño de estructuras cuánticas, ya que define la energía de emisión en potenciales aplicaciones opto-electrónicas y, en particular, en el desarrollo de LED azules y UV. Palabras clave: aleaciones ordenadas, epitaxia de capas atómicas, pozos cuánticos semiconductores, fotoluminiscencia, diodos emisores de luz. Abstract. On October 7th 2014, it was announced, by the Nobel committee, that the 2014 Physics Nobel prize was awarded to the Japanese Isamu Akasaki, Hiroshi Amano, and Shuji Nakamura for their development of LEDs with emission of blue-green visible light (Nakamura, Mukai & Senoh, 1991). The importance of this finding is based on the blue-LED potential applications as an efficient and ecological source of light, as well as on the development of the structure known as quantum wells. That is how the present development of electronic and optoelectronics devices, whose active region is composed of quantic wells, is strongly modulated by the capacity to construct such structures with high crystalline quality, chemical composition contr...

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Self-limiting mechanism in the atomic layer epitaxy of GaAs

Cited by 88 publications

References 6 publications

Atomic-layer epitaxy for heterostructures

Atomic-layer epitaxy for heterostructures

Carbon-impurity incorporation during the growth of epitaxial group III?V materials

Fabricación y caracterización de diodos emisores de luz con emisión en la región verde azul

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