Self-induced transparency of excitons in semiconductors

Huhn, William

doi:10.1016/0030-4018(86)90422-0

Cited by 10 publications

(2 citation statements)

References 11 publications

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“…For simplicity, we consider a spatially homogeneous electric field. An extension to include the space dependence of the field is straightforward (Huhn and Stahl, 1984;Stahl, 1994a, 1994b;Belleguie andMukamel, 1994, 1995;Chernyak et al, 1995) and is important for an analysis of propagation effects, examples of which have been studied by Balslev (1982, 1987), Huhn (1986), Knorr et al (1995), and Stroucken et al (1996). It will be advantageous for our further analysis to rewrite the Hamiltonian using the Hartree-Fock molecular orbital (HFMO) representation.…”

Section: The Microscopic Many-electron Modelmentioning

confidence: 99%

Nonlinear optics of semiconductor and molecular nanostructures; a common perspective

1998

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A unified microscopic theoretical framework for the calculation of optical excitations in molecular and semiconductor materials is presented. The hierarchy of many-body density matrices for a pair-conserving many-electron model and the Frenkel exciton model is rigorously truncated to a given order in the radiation field. Closed equations of motion are derived for five generating functions representing the dynamics up to third order in the laser field including phonon degrees of freedom as well as all direct and exchange-type contributions to the Coulomb interaction. By eliminating the phonons perturbatively the authors obtain equations that, in the case of the many-electron system, generalize the semiconductor Bloch equations, are particularly suited for the analysis of the interplay between coherent and incoherent dynamics including many-body correlations, and lead to thermalized exciton (rather than single-particle) distributions at long times. A complete structural equivalence with the Frenkel exciton model of molecular materials is established.

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Section: The Microscopic Many-electron Modelmentioning

confidence: 99%

Nonlinear optics of semiconductor and molecular nanostructures; a common perspective

1998

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“…In the linear propagation case, tuning into higher energies over the exciton resonance will only lead to a decrease in the velocity due to the polariton dispersion. Such a velocity dip was predicted by some excitonic theories as a sign of SIT in semiconductors [15,16].…”

Section: Further Observations: Pulse Compression and Velocity Slowdownmentioning

confidence: 95%

Coherent propagation at high intensities on a free exciton resonance in a semiconductor: self-induced transmission

Gießen

Lindén

Kühl

et al. 1999

Superlattices and Microstructures

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Self‐Induced Transparency of Excitons

Moura

Oliveira

1990

Physica Status Solidi (b)

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As is well known, the action of ultrashort resonant laser radiation pulses is able to induce coherent states of excitons / I / . The phenomena of self-induced transparency (SIT) can then be observed in the exciton part of the spectrum. The possibility of SIT due to excitons has been object of intensive study in the last years /1 to 4 / . In a very interesting paper Moskalenko et al. / 5 / studied the possibility of SIT due to excitons in semiconductors and showed that the existence of bleaching and darkening waves is determined by the sign of the exciton-exciton interaction constant g and concluded that g must be positive, i.e., a repulsive interaction constant. In solving the coupled equations that describe the excitonphoton system Moskalenko et al. 151 ignore the second derivatives with respect to x of the amplitude2 of the exciton and the photon fields. With this approximation they find erroneously that the exciton-exciton interaction constant g must be positive. In this note we show that solving the equations that describe the inhomogeneous states of excitons and photons in a rigorous way, the condition for SIT is g < 0 or the exciton-exciton interaction must be attractive. W e start from the coupled equations for excitons and photons and assume that the amplitudes of the excitons a and of the positive frequency part of a coherent electromagnetic field E+ depend only on the coordinate x and time t / 5 / , 2 2where Ql is the limiting frequency of transverse photons, m is the translational mass of the exciton, g is the exciton-exciton interaction constant, d is 'the dipole moment of the transition from the ground state to the exciton state of the crystal, c is the velocity of light in the crystal, and a = 4nd/voc2 with vo being the volume of the unit cell. Now to solve the system (l), ( 2 ) we take the solutions of such equations in the form a = $(x, t)exp(i(Kx -wt)) ,) 50739 Recife, Pernambuco, Brazil.

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Self-induced transparency of excitons in semiconductors

Cited by 10 publications

References 11 publications

Nonlinear optics of semiconductor and molecular nanostructures; a common perspective

Nonlinear optics of semiconductor and molecular nanostructures; a common perspective

Coherent propagation at high intensities on a free exciton resonance in a semiconductor: self-induced transmission

Self‐Induced Transparency of Excitons

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