Self-Induced Ge-Doped HfO2 Applied to Ge Stacked Nanowires Ferroelectric Gate-All-Around Field-Effect Transistor with Steep Subthreshold Slope Under O3 Treatment with GeO2 as Interfacial Layer
Yi-Wen Lin,
Yu-Hsien Huang,
Shan-Wen Lin
et al.
Abstract:This study reports a self-induced ferroelectric Ge-doped HfO2 (Ge:HfO2) thin film through interface reactions. In the first experiment, three treatments for forming interfacial layer (IL) were discussed through TiN/2-nm-thick Al2O3/2-nm-thick Ge:HfO2/GeO2/Ge metal-ferroelectric-insulator-semiconductor capacitors. The remnant polarization (Pr), leakage current, and interface trap density (Dit) were compared to select the most appropriate IL treatment. The results show that the in-situ ozone treatment under the … Show more
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